component
MU4003D
Public Made by Adomby adom
MIRACLE POWER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMU4003D
MIRACLE POWER · MOSFETs · TO-252
MU4003D from MIRACLE POWER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20V with threshold VGS(th) of 1.0V min to 2.5V max at VDS = VGS, ID = 250μA. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage is rated 40V with continuous drain current of 50A at TC = 25°C and pulsed 200A. |
| 3 | S | passive | Source; body diode forward continuous current is 50A and pulsed 200A, with VSD max 1.2V at IS = 30A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MIRACLE POWER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | TJ = +25 ℃ to +150 ℃ (note a) | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 50 | A | TC = 25°C | 1 | ||
| Drain Current-Continuous | ID | 31 | A | TC = 100°C | 1 | ||
| Drain Current-Pulsed | IDM | 200 | A | Repetitive rating: pulse width limited by maximum junction temperature (note b) | 1 | ||
| Maximum Power Dissipation | PD | 39 | W | TC = 25°C | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 76 | mJ | L = 0.5mH, VDD = 25V, IAS = 17.5A, RG = 25Ω, starting TJ = 25 ℃ (note c) | 1 | ||
| Operating and Store Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS = 0V, ID = 250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 40V, VGS = 0V | 1 | ||
| Forward Gate Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 1 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 8 | 10 | mΩ | VGS = 10V, ID = 30A; pulse width ≤ 300μs, duty cycle ≤ 0.5% (note d) | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 10.5 | 13 | mΩ | VGS = 4.5V, ID = 20A; pulse width ≤ 300μs, duty cycle ≤ 0.5% (note d) | 2 | |
| Drain-Source Diode Forward Continuous Current | IS | 50 | A | VG = VD = 0V, Force Current | 2 | ||
| Maximum Pulsed Current | ISM | 200 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 30A | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.2 | °C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 43 | °C/W | 1 | |||
| Gate Resistance | RG | 2.2 | Ω | VDS = VGS = 0V, f = 1.0MHz | 2 | ||
| Input Capacitance | Ciss | 1912 | pF | VDS = 20V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 126 | pF | VDS = 20V, VGS = 0V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 105 | pF | VDS = 20V, VGS = 0V, f = 1.0MHz | 2 | ||
| Turn-On Delay Time | td(on) | 8 | ns | VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 | ||
| Turn-On Rise Time | tr | 28 | ns | VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 35 | ns | VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 | ||
| Turn-Off Fall Time | tf | 7 | ns | VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0Ω | 2 | ||
| Total Gate Charge | Qg | 37 | nC | VDS = 20V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Source Charge | Qgs | 8 | nC | VDS = 20V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Gate-Drain Charge | Qgd | 7 | nC | VDS = 20V, VGS = 0 to 10V, ID = 20A | 2 | ||
| Body Diode Reverse Recovery Time | Trr | 10 | ns | IF = 20A, dIF/dt = 100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 5 | nC | IF = 20A, dIF/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
MU4003D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mu4003d-etched.step/mu4003d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mu4003d.step/mu4003d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MIRACLE POWER datasheet (5 pp, sha256
b097c8a95d7840a7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).