component

MU4003D

Public Made by Adom

by adom

MIRACLE POWER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmu4003dfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers mu4003d: viewers · Ray 17d ago
mu4003d-etched.glb Publish 0.1.0 · Ray 17d ago
mu4003d-etched.step mu4003d: factory component page (healed after the 2026-10-18 wiki outage) · Ray 17d ago
mu4003d-hero.glb mu4003d: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
mu4003d-hero.overlay.json Publish 0.1.0 · Ray 17d ago
mu4003d.glb Publish 0.1.0 · Ray 17d ago
mu4003d.kicad_mod Publish 0.1.0 · Ray 17d ago
mu4003d.kicad_sym Publish 0.1.0 · Ray 17d ago
mu4003d.lbr Publish 0.1.0 · Ray 17d ago
mu4003d.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

MU4003D

MIRACLE POWER · MOSFETs · TO-252

MU4003D from MIRACLE POWER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20V with threshold VGS(th) of 1.0V min to 2.5V max at VDS = VGS, ID = 250μA.
2 D passive Drain (also the exposed tab); drain-source voltage is rated 40V with continuous drain current of 50A at TC = 25°C and pulsed 200A.
3 S passive Source; body diode forward continuous current is 50A and pulsed 200A, with VSD max 1.2V at IS = 30A.

Key specifications

Parameter Value
Manufacturer MIRACLE POWER
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V TJ = +25 ℃ to +150 ℃ (note a) 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 50 A TC = 25°C 1
Drain Current-Continuous ID 31 A TC = 100°C 1
Drain Current-Pulsed IDM 200 A Repetitive rating: pulse width limited by maximum junction temperature (note b) 1
Maximum Power Dissipation PD 39 W TC = 25°C 1
Single Pulsed Avalanche Energy EAS 76 mJ L = 0.5mH, VDD = 25V, IAS = 17.5A, RG = 25Ω, starting TJ = 25 ℃ (note c) 1
Operating and Store Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS = 0V, ID = 250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 40V, VGS = 0V 1
Forward Gate Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 1
Gate Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(on) 8 10 mΩ VGS = 10V, ID = 30A; pulse width ≤ 300μs, duty cycle ≤ 0.5% (note d) 2
Static Drain-Source On-Resistance RDS(on) 10.5 13 mΩ VGS = 4.5V, ID = 20A; pulse width ≤ 300μs, duty cycle ≤ 0.5% (note d) 2
Drain-Source Diode Forward Continuous Current IS 50 A VG = VD = 0V, Force Current 2
Maximum Pulsed Current ISM 200 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 30A 2
Thermal Resistance, Junction to Case RθJC 3.2 °C/W 1
Thermal Resistance, Junction to Ambient RθJA 43 °C/W 1
Gate Resistance RG 2.2 Ω VDS = VGS = 0V, f = 1.0MHz 2
Input Capacitance Ciss 1912 pF VDS = 20V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 126 pF VDS = 20V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 105 pF VDS = 20V, VGS = 0V, f = 1.0MHz 2
Turn-On Delay Time td(on) 8 ns VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0Ω 2
Turn-On Rise Time tr 28 ns VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0Ω 2
Turn-Off Delay Time td(off) 35 ns VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0Ω 2
Turn-Off Fall Time tf 7 ns VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0Ω 2
Total Gate Charge Qg 37 nC VDS = 20V, VGS = 0 to 10V, ID = 20A 2
Gate-Source Charge Qgs 8 nC VDS = 20V, VGS = 0 to 10V, ID = 20A 2
Gate-Drain Charge Qgd 7 nC VDS = 20V, VGS = 0 to 10V, ID = 20A 2
Body Diode Reverse Recovery Time Trr 10 ns IF = 20A, dIF/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 5 nC IF = 20A, dIF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: MU4003D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mu4003d-etched.step / mu4003d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mu4003d.step / mu4003d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MIRACLE POWER datasheet (5 pp, sha256 b097c8a95d7840a7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF