component
WST3428
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWST3428
Winsok Semicon · MOSFETs · SOT-23-3L
WST3428 from Winsok Semicon, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±12 V maximum, with threshold VGS(th) of 0.5 V min, 0.7 V typ and 1.4 V max at ID=250uA. |
| 2 | S | passive | Source; continuous source current is 1 A max and pulsed source current is 3 A max through the body diode. |
| 3 | D | passive | Drain; drain-source voltage is rated 20 V maximum, with continuous drain current of 2.3 A at TC=25℃ and pulsed drain current of 6.9 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOT-23-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | Printed as ±12 V | 1 | |
| Continuous Drain Current, TC=25℃ | ID | 2.3 | A | VGS @ 4.5V | 1 | ||
| Continuous Drain Current, TC=70℃ | ID | 1 | A | VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 6.9 | A | Note 2 | 1 | ||
| Total Power Dissipation | PD | 0.9 | W | TA=25℃, Note 3 | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 85 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (VGS=4.5V) | RDS(ON) | 70 | 90 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Static Drain-Source On-Resistance (VGS=2.5V) | RDS(ON) | 85 | 110 | mΩ | VGS=2.5V, ID=1A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.4 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (TJ=55℃) | IDSS | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Gate Resistance | Rg | 0.5 | 2 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 1 | A | VG=VD=0V, Force Current; Notes 1,4 | 2 | ||
| Pulsed Source Current | ISM | 3 | A | Notes 2,4 | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| BVDSS Temperature Coefficient | ΔBVDSS/ΔTJ | 0.022 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -2.33 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 3 | S | VDS=5V, ID=1A | 2 | ||
| Total Gate Charge (4.5V) | Qg | 2.4 | nC | VDS=10V, VGS=4.5V, ID=1A | 2 | ||
| Gate-Source Charge | Qgs | 0.8 | nC | VDS=10V, VGS=4.5V, ID=1A | 2 | ||
| Gate-Drain Charge | Qgd | 0.7 | nC | VDS=10V, VGS=4.5V, ID=1A | 2 | ||
| Turn-On Delay Time | Td(on) | 3.2 | ns | VDD=10V, VGS=4.5V, RG=6.0Ω, ID=1A | 2 | ||
| Rise Time | Tr | 11.5 | ns | VDD=10V, VGS=4.5V, RG=6.0Ω, ID=1A | 2 | ||
| Turn-Off Delay Time | Td(off) | 25.5 | ns | VDD=10V, VGS=4.5V, RG=6.0Ω, ID=1A | 2 | ||
| Fall Time | Tf | 4 | ns | VDD=10V, VGS=4.5V, RG=6.0Ω, ID=1A | 2 | ||
| Input Capacitance | Ciss | 300 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 50 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 45 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 10 | nS | IF=1A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 3.2 | nC | IF=1A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WST3428 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
wst3428-etched.step/wst3428-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wst3428.step/wst3428.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (6 pp, sha256
e66014f04d49016f, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).