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Contents

README

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WST3428

Winsok Semicon · MOSFETs · SOT-23-3L

WST3428 from Winsok Semicon, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±12 V maximum, with threshold VGS(th) of 0.5 V min, 0.7 V typ and 1.4 V max at ID=250uA.
2 S passive Source; continuous source current is 1 A max and pulsed source current is 3 A max through the body diode.
3 D passive Drain; drain-source voltage is rated 20 V maximum, with continuous drain current of 2.3 A at TC=25℃ and pulsed drain current of 6.9 A.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOT-23-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V Printed as ±12 V 1
Continuous Drain Current, TC=25℃ ID 2.3 A VGS @ 4.5V 1
Continuous Drain Current, TC=70℃ ID 1 A VGS @ 4.5V 1
Pulsed Drain Current IDM 6.9 A Note 2 1
Total Power Dissipation PD 0.9 W TA=25℃, Note 3 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper, t<10sec 1
Thermal Resistance Junction-Case RθJC 85 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (VGS=4.5V) RDS(ON) 70 90 mΩ VGS=4.5V, ID=2A 2
Static Drain-Source On-Resistance (VGS=2.5V) RDS(ON) 85 110 mΩ VGS=2.5V, ID=1A 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.4 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS 5 uA VDS=16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Gate Resistance Rg 0.5 2 Ω VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current IS 1 A VG=VD=0V, Force Current; Notes 1,4 2
Pulsed Source Current ISM 3 A Notes 2,4 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
BVDSS Temperature Coefficient ΔBVDSS/ΔTJ 0.022 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -2.33 mV/℃ 2
Forward Transconductance gfs 3 S VDS=5V, ID=1A 2
Total Gate Charge (4.5V) Qg 2.4 nC VDS=10V, VGS=4.5V, ID=1A 2
Gate-Source Charge Qgs 0.8 nC VDS=10V, VGS=4.5V, ID=1A 2
Gate-Drain Charge Qgd 0.7 nC VDS=10V, VGS=4.5V, ID=1A 2
Turn-On Delay Time Td(on) 3.2 ns VDD=10V, VGS=4.5V, RG=6.0Ω, ID=1A 2
Rise Time Tr 11.5 ns VDD=10V, VGS=4.5V, RG=6.0Ω, ID=1A 2
Turn-Off Delay Time Td(off) 25.5 ns VDD=10V, VGS=4.5V, RG=6.0Ω, ID=1A 2
Fall Time Tf 4 ns VDD=10V, VGS=4.5V, RG=6.0Ω, ID=1A 2
Input Capacitance Ciss 300 pF VDS=10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 50 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 45 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 10 nS IF=1A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 3.2 nC IF=1A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: WST3428
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: wst3428-etched.step / wst3428-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wst3428.step / wst3428.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (6 pp, sha256 e66014f04d49016f, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF