component
SE2305Q
Public Made by Adomby adom
SINO IC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSE2305Q
SINO IC · MOSFETs · SOT-23
SE2305Q from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; absolute maximum drain-source voltage is -20 V and gate-source voltage is ±12 V. |
| 2 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±12 V absolute maximum, and the device is specified for VGS = -2.5 V and -4.5 V drive. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; continuous drain current is -4.7 A and pulsed drain current is -20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current Continuous | ID | -4.7 | A | 1 | |||
| Drain Current Pulsed | ID | -20 | A | 1 | |||
| Total Power Dissipation | PD | 1.25 | W | @TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -40 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID=-250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | -1 | μA | VDS= -16V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | μA | VGS= 8V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -1 | V | VDS= VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 30 | 35 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 40 | mΩ | VGS=-2.5V, ID=-3A | 2 | |
| Total Gate Charge | Qg | 7.4 | 9.3 | 11 | nC | VGS=-4.5V, VDS=-10V, ID=4A | 2 |
| Gate Source Charge | Qgs | 0.8 | 1 | 12 | nC | VGS=-4.5V, VDS=-10V, ID=4A | 2 |
| Gate Drain Charge | Qgd | 1.3 | 2.2 | 3.1 | nC | VGS=-4.5V, VDS=-10V, ID=4A | 2 |
| Junction to Case Thermal Resistance | RθJC | 43 | ℃/W | Junction to Case | 2 | ||
| Junction to Ambient Thermal Resistance | RθJA | 65 | ℃/W | Junction to Ambient (t≦10s) | 2 |
CAD (KiCad official)
- Symbol:
SE2305Q - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
se2305q-etched.step/se2305q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se2305q.step/se2305q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (8 pp, sha256
1408060508363af4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).