component

SE2305Q

Public Made by Adom

by adom

SINO IC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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se2305q-etched.step se2305q: factory component page (tier=lcsc) · Ray 17d ago
se2305q-hero.glb se2305q: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
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se2305q.step Publish 0.1.0 · Ray 17d ago

SE2305Q

SINO IC · MOSFETs · SOT-23

SE2305Q from SINO IC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; absolute maximum drain-source voltage is -20 V and gate-source voltage is ±12 V.
2 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±12 V absolute maximum, and the device is specified for VGS = -2.5 V and -4.5 V drive.
3 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -4.7 A and pulsed drain current is -20 A.

Key specifications

Parameter Value
Manufacturer SINO IC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current Continuous ID -4.7 A 1
Drain Current Pulsed ID -20 A 1
Total Power Dissipation PD 1.25 W @TA=25℃ 1
Operating Junction Temperature Range TJ -40 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -20 V ID=-250μA, VGS=0 V 2
Drain to Source Leakage Current IDSS -1 μA VDS= -16V, VGS=0V 2
Gate-Body Leakage Current IGSS 100 μA VGS= 8V 2
Gate Threshold Voltage VGS(th) -0.4 -1 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 30 35 mΩ VGS=-4.5V, ID=-4A 2
Static Drain-Source On-Resistance RDS(ON) 35 40 mΩ VGS=-2.5V, ID=-3A 2
Total Gate Charge Qg 7.4 9.3 11 nC VGS=-4.5V, VDS=-10V, ID=4A 2
Gate Source Charge Qgs 0.8 1 12 nC VGS=-4.5V, VDS=-10V, ID=4A 2
Gate Drain Charge Qgd 1.3 2.2 3.1 nC VGS=-4.5V, VDS=-10V, ID=4A 2
Junction to Case Thermal Resistance RθJC 43 ℃/W Junction to Case 2
Junction to Ambient Thermal Resistance RθJA 65 ℃/W Junction to Ambient (t≦10s) 2

CAD (KiCad official)

  • Symbol: SE2305Q
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: se2305q-etched.step / se2305q-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se2305q.step / se2305q.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SINO IC datasheet (8 pp, sha256 1408060508363af4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF