component
BT158W-1200TQ
Public Made by Adomby adom
WeEn Semiconductors TRIACs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBT158W-1200TQ
WeEn Semiconductors · TRIACs · TO-247-3
BT158W-1200TQ from WeEn Semiconductors, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SCR; current return terminal for the gate trigger and on-state current (IT(RMS) up to 126 A, IT(AV) up to 80 A at Tmb ≤ 117 °C). |
| 2 | A | passive | Anode of the SCR; blocks VDRM/VRRM of 1200 V and is internally connected to the mounting base. |
| 3 | G | input | Gate; trigger current IGT max 70 mA at VD = 12 V, peak gate current IGM max 8 A and peak reverse gate voltage VRGM max 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WeEn Semiconductors |
| Package | TO-247-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 1200 | V | 3 | |||
| Repetitive peak reverse voltage | VRRM | 1200 | V | 3 | |||
| Average on-state current | IT(AV) | 80 | A | half sine wave; Tmb ≤ 117 °C | 3 | ||
| RMS on-state current | IT(RMS) | 126 | A | half sine wave; Tmb ≤ 117 °C; Fig. 1; Fig. 2; Fig. 3 | 3 | ||
| Non-repetitive peak on-state current | ITSM | 1100 | A | half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 | 3 | ||
| Non-repetitive peak on-state current | ITSM | 1210 | A | half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 3 | ||
| I2t for fusing | I2t | 6115 | A²s | tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; no voltage reapplied | 3 | ||
| Rate of rise of on-state current | dIT/dt | 150 | A/µs | IG = 200 mA | 3 | ||
| Peak gate current | IGM | 8 | A | 3 | |||
| Peak reverse gate voltage | VRGM | 5 | V | 3 | |||
| Peak gate power | PGM | 20 | W | 3 | |||
| Average gate power | PG(AV) | 1 | W | average over any 20 ms period | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Gate trigger current | IGT | 70 | mA | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7; Fig. 8 | 7 | ||
| Latching current | IL | 300 | mA | VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 9 | 7 | ||
| Holding current | IH | 200 | mA | VD = 12 V; Tj = 25 °C; Fig. 10 | 7 | ||
| On-state voltage | VT | 1.35 | V | IT = 80 A; Tj = 25 °C; Fig. 11 | 7 | ||
| On-state voltage | VT | 1.65 | V | IT = 160 A; Tj = 25 °C; Fig. 11 | 7 | ||
| Gate trigger voltage | VGT | 0.7 | 1 | V | VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 12 | 7 | |
| Gate trigger voltage | VGT | 0.25 | 0.4 | V | VD = 800 V; IT = 0.1 A; Tj = 125 °C; Fig. 12 | 7 | |
| Off-state current | ID | 3 | mA | VD = 1200 V; Tj = 125 °C | 7 | ||
| Reverse current | IR | 3 | mA | VR = 1200 V; Tj = 125 °C | 7 | ||
| Rate of rise of off-state voltage | dVD/dt | 1500 | V/µs | VDM = 800 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform | 7 | ||
| Rate of rise of off-state voltage | dVD/dt | 1000 | V/µs | VDM = 800 V; Tj = 150 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform | 7 | ||
| Thermal resistance from junction to mounting base | Rth(j-mb) | 0.25 | K/W | full cycle; Fig. 6 | 6 | ||
| Gate-controlled turn-on time | tgt | 2 | µs | ITM = 40 A; VD = 800 V; IG = 0.1 A; dIG/dt = 5 A/µs; Tj = 25 °C | 7 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 50 | K/W | in free air | 6 | ||
| Commutated turn-off time | tq | 150 | µs | VDM = 804 V; Tj = 125 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK(ext) = 100 kΩ; (VDM = 67% of VDRM) | 7 |
CAD (KiCad official)
- Symbol:
BT158W-1200TQ - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
bt158w-1200tq-etched.step/bt158w-1200tq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bt158w-1200tq.step/bt158w-1200tq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WeEn Semiconductors datasheet (13 pp, sha256
f3b923f47869030a, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).