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BT158W-1200TQ

WeEn Semiconductors · TRIACs · TO-247-3

BT158W-1200TQ from WeEn Semiconductors, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SCR; current return terminal for the gate trigger and on-state current (IT(RMS) up to 126 A, IT(AV) up to 80 A at Tmb ≤ 117 °C).
2 A passive Anode of the SCR; blocks VDRM/VRRM of 1200 V and is internally connected to the mounting base.
3 G input Gate; trigger current IGT max 70 mA at VD = 12 V, peak gate current IGM max 8 A and peak reverse gate voltage VRGM max 5 V.

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package TO-247-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 1200 V 3
Repetitive peak reverse voltage VRRM 1200 V 3
Average on-state current IT(AV) 80 A half sine wave; Tmb ≤ 117 °C 3
RMS on-state current IT(RMS) 126 A half sine wave; Tmb ≤ 117 °C; Fig. 1; Fig. 2; Fig. 3 3
Non-repetitive peak on-state current ITSM 1100 A half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 3
Non-repetitive peak on-state current ITSM 1210 A half sine wave; Tj(init) = 25 °C; tp = 8.3 ms 3
I2t for fusing I2t 6115 A²s tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; no voltage reapplied 3
Rate of rise of on-state current dIT/dt 150 A/µs IG = 200 mA 3
Peak gate current IGM 8 A 3
Peak reverse gate voltage VRGM 5 V 3
Peak gate power PGM 20 W 3
Average gate power PG(AV) 1 W average over any 20 ms period 3
Storage temperature Tstg -40 150 °C 3
Junction temperature Tj 150 °C 3
Gate trigger current IGT 70 mA VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7; Fig. 8 7
Latching current IL 300 mA VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 9 7
Holding current IH 200 mA VD = 12 V; Tj = 25 °C; Fig. 10 7
On-state voltage VT 1.35 V IT = 80 A; Tj = 25 °C; Fig. 11 7
On-state voltage VT 1.65 V IT = 160 A; Tj = 25 °C; Fig. 11 7
Gate trigger voltage VGT 0.7 1 V VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 12 7
Gate trigger voltage VGT 0.25 0.4 V VD = 800 V; IT = 0.1 A; Tj = 125 °C; Fig. 12 7
Off-state current ID 3 mA VD = 1200 V; Tj = 125 °C 7
Reverse current IR 3 mA VR = 1200 V; Tj = 125 °C 7
Rate of rise of off-state voltage dVD/dt 1500 V/µs VDM = 800 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform 7
Rate of rise of off-state voltage dVD/dt 1000 V/µs VDM = 800 V; Tj = 150 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform 7
Thermal resistance from junction to mounting base Rth(j-mb) 0.25 K/W full cycle; Fig. 6 6
Gate-controlled turn-on time tgt 2 µs ITM = 40 A; VD = 800 V; IG = 0.1 A; dIG/dt = 5 A/µs; Tj = 25 °C 7
Thermal resistance from junction to ambient Rth(j-a) 50 K/W in free air 6
Commutated turn-off time tq 150 µs VDM = 804 V; Tj = 125 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK(ext) = 100 kΩ; (VDM = 67% of VDRM) 7

CAD (KiCad official)

  • Symbol: BT158W-1200TQ
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: bt158w-1200tq-etched.step / bt158w-1200tq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bt158w-1200tq.step / bt158w-1200tq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (13 pp, sha256 f3b923f47869030a, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF