BT158W-1200TQ

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  "title": "BT158W-1200TQ",
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    "mpn": "BT158W-1200TQ",
    "manufacturer": "WeEn Semiconductors",
    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Transistors",
    "subcategory": "TRIACs",
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      "lcsc": "C602567",
      "digikey": "BT158W-1200TQ-ND",
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        "name": "K",
        "type": "passive",
        "description": "Cathode of the SCR; current return terminal for the gate trigger and on-state current (IT(RMS) up to 126 A, IT(AV) up to 80 A at Tmb ≤ 117 °C)."
      },
      {
        "number": "2",
        "name": "A",
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        "description": "Anode of the SCR; blocks VDRM/VRRM of 1200 V and is internally connected to the mounting base."
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      {
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        "name": "G",
        "type": "input",
        "description": "Gate; trigger current IGT max 70 mA at VD = 12 V, peak gate current IGM max 8 A and peak reverse gate voltage VRGM max 5 V."
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  "metadata": {
    "specs": {
      "Manufacturer": "WeEn Semiconductors",
      "Package": "TO-247-3",
      "Category": "Transistors",
      "Pins": "3"
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          "name": "Repetitive peak off-state voltage",
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          "name": "Average on-state current",
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          "name": "Non-repetitive peak on-state current",
          "symbol": "ITSM",
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          "conditions": "half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5",
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          "name": "Rate of rise of on-state current",
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          "conditions": "IG = 200 mA",
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          "name": "Peak gate power",
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          "max": 1,
          "conditions": "average over any 20 ms period",
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        {
          "name": "Storage temperature",
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          "unit": "°C",
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          "name": "Junction temperature",
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          "name": "Gate trigger current",
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          "conditions": "VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7; Fig. 8",
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          "name": "Latching current",
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          "conditions": "VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 9",
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          "kind": "electrical",
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          "max": 200,
          "conditions": "VD = 12 V; Tj = 25 °C; Fig. 10",
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          "name": "On-state voltage",
          "symbol": "VT",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.35,
          "conditions": "IT = 80 A; Tj = 25 °C; Fig. 11",
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          "name": "On-state voltage",
          "symbol": "VT",
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          "unit": "V",
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          "max": 1.65,
          "conditions": "IT = 160 A; Tj = 25 °C; Fig. 11",
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          "name": "Gate trigger voltage",
          "symbol": "VGT",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.7,
          "max": 1,
          "conditions": "VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 12",
          "source_page": 7,
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          "name": "Gate trigger voltage",
          "symbol": "VGT",
          "kind": "electrical",
          "unit": "V",
          "min": 0.25,
          "typ": 0.4,
          "max": null,
          "conditions": "VD = 800 V; IT = 0.1 A; Tj = 125 °C; Fig. 12",
          "source_page": 7,
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          "name": "Off-state current",
          "symbol": "ID",
          "kind": "electrical",
          "unit": "mA",
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          "max": 3,
          "conditions": "VD = 1200 V; Tj = 125 °C",
          "source_page": 7,
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        {
          "name": "Reverse current",
          "symbol": "IR",
          "kind": "electrical",
          "unit": "mA",
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          "max": 3,
          "conditions": "VR = 1200 V; Tj = 125 °C",
          "source_page": 7,
          "source": "datasheet"
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          "name": "Rate of rise of off-state voltage",
          "symbol": "dVD/dt",
          "kind": "electrical",
          "unit": "V/µs",
          "min": 1500,
          "typ": null,
          "max": null,
          "conditions": "VDM = 800 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Rate of rise of off-state voltage",
          "symbol": "dVD/dt",
          "kind": "electrical",
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          "min": 1000,
          "typ": null,
          "max": null,
          "conditions": "VDM = 800 V; Tj = 150 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform",
          "source_page": 7,
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        },
        {
          "name": "Thermal resistance from junction to mounting base",
          "symbol": "Rth(j-mb)",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 0.25,
          "conditions": "full cycle; Fig. 6",
          "source_page": 6,
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        },
        {
          "name": "Gate-controlled turn-on time",
          "symbol": "tgt",
          "kind": "timing",
          "unit": "µs",
          "min": null,
          "typ": 2,
          "max": null,
          "conditions": "ITM = 40 A; VD = 800 V; IG = 0.1 A; dIG/dt = 5 A/µs; Tj = 25 °C",
          "source_page": 7,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance from junction to ambient",
          "symbol": "Rth(j-a)",
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          "unit": "K/W",
          "min": null,
          "typ": 50,
          "max": null,
          "conditions": "in free air",
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        {
          "name": "Commutated turn-off time",
          "symbol": "tq",
          "kind": "timing",
          "unit": "µs",
          "min": null,
          "typ": 150,
          "max": null,
          "conditions": "VDM = 804 V; Tj = 125 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK(ext) = 100 kΩ; (VDM = 67% of VDRM)",
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