component
SVG086R0NT
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Hangzhou Silan Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSVG086R0NT
Hangzhou Silan Microelectronics · MOSFETs · TO-252
SVG086R0NT from Hangzhou Silan Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement-mode MOSFET, with gate-source voltage limited to ±20 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, with drain-source voltage rated at 80 V. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with integral body-diode continuous source current rated at 120 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS=VDS, ID=250µA | 3 | |
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | VGS=0V, ID=250µA | 3 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=80V, VGS=0V | 3 | ||
| Static Drain-Source On State Resistance | RDS(on) | 5 | 6 | mΩ | VGS=10V, ID=50A | 3 | |
| Continuous Source Current | IS | 120 | A | Integral reverse P-N junction diode in the MOSFET | 3 | ||
| Pulsed Source Current | ISM | 480 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.4 | V | IS=50A, VGS=0V | 3 | ||
| Drain Source Voltage | VDS | 80 | V | 2 | |||
| Drain Current (TC=25°C) | ID | 120 | A | TC=25°C | 2 | ||
| Drain Current (TC=100°C) | ID | 76 | A | TC=100°C | 2 | ||
| Drain Current Pulsed | IDM | 480 | A | 2 | |||
| Power Dissipation | PD | 156 | W | TC=25C | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 306 | mJ | L=0.5mH, IAS=35A, VDD=50V, RG=25, starting TJ=25C (Note 1) | 2 | ||
| Operation Junction Temperature Range | TJ | -55 | 150 | C | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | C | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.8 | C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | C/W | 2 |
CAD (KiCad official)
- Symbol:
SVG086R0NT - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
svg086r0nt-etched.step/svg086r0nt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);svg086r0nt.step/svg086r0nt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Hangzhou Silan Microelectronics datasheet (9 pp, sha256
0624c43d00eeb6f0, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).