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SVG086R0NT

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Hangzhou Silan Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 14d ago
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package.json Publish 0.1.0 · Ray 14d ago
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README.md Publish 0.1.0 · Ray 14d ago
svg086r0nt-etched.glb Publish 0.1.0 · Ray 14d ago
svg086r0nt-etched.step svg086r0nt: factory component page (tier=lcsc) · Ray 14d ago
svg086r0nt-hero.glb svg086r0nt: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
svg086r0nt-hero.overlay.json Publish 0.1.0 · Ray 14d ago
svg086r0nt.glb Publish 0.1.0 · Ray 14d ago
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SVG086R0NT

Hangzhou Silan Microelectronics · MOSFETs · TO-252

SVG086R0NT from Hangzhou Silan Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement-mode MOSFET, with gate-source voltage limited to ±20 V.
2 Drain passive Drain terminal of the N-channel MOSFET, with drain-source voltage rated at 80 V.
3 Source passive Source terminal of the N-channel MOSFET, with integral body-diode continuous source current rated at 120 A.

Key specifications

Parameter Value
Manufacturer Hangzhou Silan Microelectronics
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250µA 3
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V, ID=250µA 3
Drain-Source Leakage Current IDSS 1 µA VDS=80V, VGS=0V 3
Static Drain-Source On State Resistance RDS(on) 5 6 mΩ VGS=10V, ID=50A 3
Continuous Source Current IS 120 A Integral reverse P-N junction diode in the MOSFET 3
Pulsed Source Current ISM 480 A 3
Diode Forward Voltage VSD 1.4 V IS=50A, VGS=0V 3
Drain Source Voltage VDS 80 V 2
Drain Current (TC=25°C) ID 120 A TC=25°C 2
Drain Current (TC=100°C) ID 76 A TC=100°C 2
Drain Current Pulsed IDM 480 A 2
Power Dissipation PD 156 W TC=25C 2
Single Pulsed Avalanche Energy EAS 306 mJ L=0.5mH, IAS=35A, VDD=50V, RG=25, starting TJ=25C (Note 1) 2
Operation Junction Temperature Range TJ -55 150 C 2
Storage Temperature Range Tstg -55 150 C 2
Thermal Resistance, Junction-to-Case RθJC 0.8 C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W 2

CAD (KiCad official)

  • Symbol: SVG086R0NT
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: svg086r0nt-etched.step / svg086r0nt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); svg086r0nt.step / svg086r0nt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Hangzhou Silan Microelectronics datasheet (9 pp, sha256 0624c43d00eeb6f0, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF