# SVG086R0NT

**Hangzhou Silan Microelectronics** · MOSFETs · TO-252

SVG086R0NT from Hangzhou Silan Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement-mode MOSFET, with gate-source voltage limited to ±20 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, with drain-source voltage rated at 80 V. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with integral body-diode continuous source current rated at 120 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VGS=VDS, ID=250µA | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 80 |  |  | V | VGS=0V, ID=250µA | 3 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=80V, VGS=0V | 3 |
| Static Drain-Source On State Resistance | RDS(on) |  | 5 | 6 | mΩ | VGS=10V, ID=50A | 3 |
| Continuous Source Current | IS |  |  | 120 | A | Integral reverse P-N junction diode in the MOSFET | 3 |
| Pulsed Source Current | ISM |  |  | 480 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.4 | V | IS=50A, VGS=0V | 3 |
| Drain Source Voltage | VDS |  |  | 80 | V |  | 2 |
| Drain Current (TC=25°C) | ID |  |  | 120 | A | TC=25°C | 2 |
| Drain Current (TC=100°C) | ID |  |  | 76 | A | TC=100°C | 2 |
| Drain Current Pulsed | IDM |  |  | 480 | A |  | 2 |
| Power Dissipation | PD |  |  | 156 | W | TC=25C | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 306 | mJ | L=0.5mH, IAS=35A, VDD=50V, RG=25, starting TJ=25C (Note 1) | 2 |
| Operation Junction Temperature Range | TJ | -55 |  | 150 | C |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | C |  | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 0.8 |  | C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 62.5 |  | C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `SVG086R0NT`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `svg086r0nt-etched.step` / `svg086r0nt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `svg086r0nt.step` / `svg086r0nt.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Hangzhou Silan Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590228245124571136) (9 pp, sha256 `0624c43d00eeb6f0`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/svg086r0nt-datasheet.pdf)