component
G2K2P10S2E
Public Made by Adomby adom
GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG2K2P10S2E
GOFORD · MOSFETs · SOP-8
G2K2P10S2E from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1, with VDS rated -100 V and continuous drain current -3.5 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with VGS rated ±20 V and threshold of -1 V to -2.5 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2, with VDS rated -100 V and continuous drain current -3.5 A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2, with VGS rated ±20 V and threshold of -1 V to -2.5 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2, shorted to pin 6, with VDS rated -100 V and pulsed drain current -14 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, shorted to pin 5, with VDS rated -100 V and pulsed drain current -14 A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1, shorted to pin 8, with VDS rated -100 V and pulsed drain current -14 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, shorted to pin 7, with VDS rated -100 V and pulsed drain current -14 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | -14 | A | TC = 25ºC, note1 | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 3.1 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 25 | mJ | Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 40 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -100V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 170 | 200 | mΩ | VGS = -10V, ID = -3A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 180 | 220 | mΩ | VGS = -4.5V, ID = -2A | 2 | |
| Continuous Body Diode Current | IS | -3.5 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -3A, VGS = 0V | 2 | ||
| Forward Transconductance | gFS | 10 | S | VDS = -5V, ID = -3A | 2 | ||
| Input Capacitance | Ciss | 1623 | pF | VGS = 0V, VDS = -50V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 43 | pF | VGS = 0V, VDS = -50V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 42 | pF | VGS = 0V, VDS = -50V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 23 | nC | VDD = -50V, ID = -3A, VGS = -10V | 2 | ||
| Gate-Source Charge | Qgs | 4.2 | nC | VDD = -50V, ID = -3A, VGS = -10V | 2 | ||
| Gate-Drain Charge | Qgd | 5.2 | nC | VDD = -50V, ID = -3A, VGS = -10V | 2 | ||
| Turn-on Delay Time | td(on) | 24 | ns | VDD = -50V, ID = -3A, RG = 3Ω | 2 | ||
| Turn-on Rise Time | tr | 5 | ns | VDD = -50V, ID = -3A, RG = 3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 19 | ns | VDD = -50V, ID = -3A, RG = 3Ω | 2 | ||
| Turn-off Fall Time | tf | 11 | ns | VDD = -50V, ID = -3A, RG = 3Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 22 | nC | IF = -3A, VGS = 0V, di/dt=-100A/us | 2 | ||
| Reverse Recovery Time | Trr | 29 | ns | IF = -3A, VGS = 0V, di/dt=-100A/us | 2 |
CAD (KiCad official)
- Symbol:
G2K2P10S2E - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
g2k2p10s2e-etched.step/g2k2p10s2e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g2k2p10s2e.step/g2k2p10s2e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
4830a1ebd4007e4f, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).