component

G2K2P10S2E

Public Made by Adom

by adom

GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsg2k2p10s2efactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 18d ago
viewers g2k2p10s2e: viewers · Ray 18d ago
g2k2p10s2e-etched.glb Publish 0.1.0 · Ray 18d ago
g2k2p10s2e-etched.step g2k2p10s2e: factory component page (tier=lcsc) · Ray 18d ago
g2k2p10s2e-hero.glb g2k2p10s2e: hero GLB from the etched model (keeps the MPN mark) · Ray 18d ago
g2k2p10s2e-hero.overlay.json Publish 0.1.0 · Ray 18d ago
g2k2p10s2e.glb Publish 0.1.0 · Ray 18d ago
g2k2p10s2e.kicad_mod Publish 0.1.0 · Ray 18d ago
g2k2p10s2e.kicad_sym Publish 0.1.0 · Ray 18d ago
g2k2p10s2e.lbr Publish 0.1.0 · Ray 18d ago
g2k2p10s2e.step Publish 0.1.0 · Ray 18d ago
package.json Publish 0.1.0 · Ray 18d ago
page.json Set visibility: public · Ray 18d ago
README.md Publish 0.1.0 · Ray 18d ago

G2K2P10S2E

GOFORD · MOSFETs · SOP-8

G2K2P10S2E from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1, with VDS rated -100 V and continuous drain current -3.5 A.
2 G1 input Gate of P-channel MOSFET 1, with VGS rated ±20 V and threshold of -1 V to -2.5 V.
3 S2 passive Source of P-channel MOSFET 2, with VDS rated -100 V and continuous drain current -3.5 A.
4 G2 input Gate of P-channel MOSFET 2, with VGS rated ±20 V and threshold of -1 V to -2.5 V.
5 D2 passive Drain of P-channel MOSFET 2, shorted to pin 6, with VDS rated -100 V and pulsed drain current -14 A.
6 D2 passive Drain of P-channel MOSFET 2, shorted to pin 5, with VDS rated -100 V and pulsed drain current -14 A.
7 D1 passive Drain of P-channel MOSFET 1, shorted to pin 8, with VDS rated -100 V and pulsed drain current -14 A.
8 D1 passive Drain of P-channel MOSFET 1, shorted to pin 7, with VDS rated -100 V and pulsed drain current -14 A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V TC = 25ºC 1
Continuous Drain Current ID -3.5 A TC = 25ºC 1
Pulsed Drain Current IDM -14 A TC = 25ºC, note1 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 3.1 W TC = 25ºC 1
Single pulse avalanche energy EAS 25 mJ Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 40 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -100 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -100V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 170 200 mΩ VGS = -10V, ID = -3A 2
Drain-Source On-Resistance RDS(on) 180 220 mΩ VGS = -4.5V, ID = -2A 2
Continuous Body Diode Current IS -3.5 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -3A, VGS = 0V 2
Forward Transconductance gFS 10 S VDS = -5V, ID = -3A 2
Input Capacitance Ciss 1623 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Output Capacitance Coss 43 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 42 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Total Gate Charge Qg 23 nC VDD = -50V, ID = -3A, VGS = -10V 2
Gate-Source Charge Qgs 4.2 nC VDD = -50V, ID = -3A, VGS = -10V 2
Gate-Drain Charge Qgd 5.2 nC VDD = -50V, ID = -3A, VGS = -10V 2
Turn-on Delay Time td(on) 24 ns VDD = -50V, ID = -3A, RG = 3Ω 2
Turn-on Rise Time tr 5 ns VDD = -50V, ID = -3A, RG = 3Ω 2
Turn-off Delay Time td(off) 19 ns VDD = -50V, ID = -3A, RG = 3Ω 2
Turn-off Fall Time tf 11 ns VDD = -50V, ID = -3A, RG = 3Ω 2
Reverse Recovery Charge Qrr 22 nC IF = -3A, VGS = 0V, di/dt=-100A/us 2
Reverse Recovery Time Trr 29 ns IF = -3A, VGS = 0V, di/dt=-100A/us 2

CAD (KiCad official)

  • Symbol: G2K2P10S2E
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: g2k2p10s2e-etched.step / g2k2p10s2e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g2k2p10s2e.step / g2k2p10s2e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 4830a1ebd4007e4f, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF