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Contents

README

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TP5610B

TPOWER · DC-DC Converters · ESOP-8

TP5610B from TPOWER, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BST passive Supplies the internal high-side power switch driver and connects through a bootstrap capacitor of 68nF to 100nF to the SW pin, which should be placed as close to the chip as possible.
2 VIN power_in Chip supply input with a rated range of -0.3 V to +36 V (absolute maximum), a recommended operating range of 9 V to 30 V, and a input overvoltage protection threshold of 30 V; a bypass capacitor to ground is required.
3 SW output Internal power switch output node that drives the inductor, rated from -0.7 V to VVIN+0.3 V.
4 PGND power_in Chip power ground, which carries the high-current return path of the converter.
5 GND power_in Chip signal ground for the control circuitry, rated for the same -0.3 V to +6 V reference as the other low-voltage pins.
6 FB input Error amplifier feedback input that sets the output voltage through a resistor divider referenced to the 1 V (typical) FB threshold, with R2 recommended below 30 kΩ and a rating of -0.3 V to +6 V.
7 SNS input Output constant-current sense input, where a resistor to ground sets the output current against a 75 mV (typical) reference threshold, with a rating of -0.3 V to +6 V.
8 EN input Chip enable input where logic high (2.5 V minimum) enables switching and logic low (0.6 V maximum) puts the chip in standby, with an internal 200 kΩ pull-up and a rating of -0.3 V to +6 V.
9 Exposed PAD passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer TPOWER
Package ESOP-8
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VIN input voltage VVIN 6.5 30 V 3
EN logic high input voltage VEN_H 2.5 V 3
EN logic low input voltage VEN_L 0.6 V 3
Maximum duty cycle DMAX 95 % 3
High-side power MOSFET drain-source breakdown voltage VBR_DSS_H 32 V VGS=0V, ID=250uA 3
Low-side power MOSFET drain-source breakdown voltage VBR_DSS_L 32 V VGS=0V, ID=250uA 3
High-side power MOSFET drain leakage current ILEAK_H 1 uA VGS=0V, VDS=30V 3
Low-side power MOSFET drain leakage current ILEAK_L 1 uA VGS=0V, VDS=30V 3
Quiescent operating current IQC 360 uA EN=0V 3
Recommended system input voltage VIN 9 30 V 正常工作 3
Recommended operating ambient temperature TOP -20 65 ℃ 正常工作 3
VIN to GND voltage -0.3 36 V 2
SW to GND voltage -0.7 V 2
FB, SNS, EN to GND voltage -0.3 6 V 2
Power dissipation 2 W 2
Storage ambient temperature -50 150 ℃ 2
Operating junction temperature range -40 150 ℃ 2
Operating ambient temperature range -40 105 ℃ 2
ESD HBM 2000 V 2
ESD MM 200 V 2
VIN start-up voltage VST 6.5 V VVIN上升 3
VIN undervoltage lockout threshold VUVLO 6.1 V VVIN下降 3
VIN overvoltage protection threshold VVIN_OVP 30 V VVIN上升 3
EN pull-up resistance REN_H 200 kΩ 3
Constant-current output reference threshold VREF_SNS 75 mV 3
FB feedback reference threshold VREF_FB 1 V 3
Operating frequency FOSC 135 kHz 3
Minimum on-time TON_MIN 400 ns 3
Output overvoltage protection threshold VOVP 105 % 相对正常带载时的输出电压 3
Output overcurrent/short-circuit protection threshold VOCP 50 % 相对正常带载时的输出电压 3
Output overcurrent/short-circuit protection delay TOCP 15 ms 3
Output overcurrent/short-circuit recovery time TREC 200 ms 3
High-side power MOSFET on-resistance RON_H 58 mΩ VGS=5V, ID=1A 3
Low-side power MOSFET on-resistance RON_L 58 mΩ VGS=5V, ID=1A 3
Over-temperature protection threshold TSD 150 ℃ 3
Over-temperature protection hysteresis THYS 125 ℃ 3

CAD (KiCad official)

  • Symbol: TP5610B
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm
  • 3D model: ESOP-8 (KiCad packages3D, STEP)
  • 3D model files: tp5610b-etched.step / tp5610b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tp5610b.step / tp5610b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TPOWER datasheet (6 pp, sha256 03af83df175a41c8, retrieved 2026-10-19, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF