AO3405-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the P-channel MOSFET, rated for VGS of ±20 V maximum with a threshold of -0.5 to -2.0 V at ID = -250 µA.
2	S	passive	Source of the P-channel MOSFET, with continuous source-drain body diode current of -2.1 A at TC = 25 °C.
3	D	passive	Drain of the P-channel MOSFET, rated for VDS of -30 V and continuous drain current of -5.6 A at TC = 25 °C.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SOT-23(TO-236)
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			-30	V	TA = 25 °C	1
Gate-Source Voltage	VGS	-20		20	V	TA = 25 °C	1
Continuous Drain Current	ID			-5.6	A	TJ = 150 °C, TC = 25 °C	1
Continuous Drain Current	ID			-5.4	A	TA = 25 °C, b,c	1
Continuous Drain Current	ID			-4.3	A	TA = 70 °C, b,c	1
Pulsed Drain Current	IDM			-18	A	t = 100 µs	1
Continuous Source-Drain Diode Current	IS			-2.1	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			-1	A	TA = 25 °C, b,c	1
Maximum Power Dissipation	PD			2.5	W	TC = 25 °C	1
Maximum Power Dissipation	PD			1.6	W	TC = 70 °C	1
Maximum Power Dissipation	PD			1.25	W	TA = 25 °C, b,c	1
Maximum Power Dissipation	PD			0.8	W	TA = 70 °C, b,c	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance	RthJA		75	100	°C/W	t ≤ 5 s, b,d	1
Junction-to-Foot (Drain) Thermal Resistance	RthJF		40	50	°C/W	Steady State	1
Drain-Source Breakdown Voltage	VDS	-30			V	VGS = 0 V, ID = -250 µA	2
Gate-Source Threshold Voltage	VGS(th)	-0.5		-2	V	VDS = VGS, ID = -250 µA	2
Gate-Source Leakage	IGSS			100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			-1	µA	VDS = -30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			-5	µA	VDS = -30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	-2.5			A	VDS ≤ -5 V, VGS = -10 V	2
Drain-Source On-State Resistance	RDS(on)		0.046		Ω	VGS = -10 V, ID = -4.4 A	2
Drain-Source On-State Resistance	RDS(on)		0.049		Ω	VGS = -6 V, ID = -4 A	2
Drain-Source On-State Resistance	RDS(on)		0.054		Ω	VGS = -4.5 V, ID = -3.6 A	2
Forward Transconductance	gfs		18		S	VDS = -15 V, ID = -3.4 A	2
Total Gate Charge	Qg		24	36	nC	VDS = -15 V, VGS = -10 V, ID = -5.4 A	2
Total Gate Charge	Qg		11.4	17	nC	VDS = -15 V, VGS = -4.5 V, ID = -5.4 A	2
Gate Resistance	Rg	1.5	7.7	15.4	Ω	f = 1 MHz	2
Turn-On Delay Time	td(on)		13	20	ns	VDD = -15 V, RL = 3.5 Ω, VGEN = -10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		38	57	ns	VDD = -15 V, RL = 3.5 Ω, VGEN = -10 V, Rg = 1 Ω	2
Fall Time	tf		6	12	ns	VDD = -15 V, RL = 3.5 Ω, VGEN = -10 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		28	42	ns	VDD = -15 V, RL = 3.5 Ω, VGEN = -4.5 V, Rg = 1 Ω	2
Rise Time	tr		16	24	ns	VDD = -15 V, RL = 3.5 Ω, VGEN = -4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		30	45	ns	VDD = -15 V, RL = 3.5 Ω, VGEN = -4.5 V, Rg = 1 Ω	2
Fall Time	tf		10	20	ns	VDD = -15 V, RL = 3.5 Ω, VGEN = -4.5 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			-2.1	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			-80	A	t = 100 µs	2
Body Diode Voltage	VSD		-0.8	-1.2	V	IS = -4.3 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr		15	23	ns	IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		7	14	nC	IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C	2
VDS Temperature Coefficient	ΔVDS/TJ		-19		mV/°C	ID = -250 µA	2
Gate-Source Charge	Qgs		3.4		nC		2
Gate-Drain Charge	Qgd		3.8		nC		2
Reverse Recovery Fall Time	ta		8		ns		2
Reverse Recovery Rise Time	tb		7		ns		2

CAD (land: KiCad; 3D: generated from the datasheet)

Symbol: AO3405-VB
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
3D model files: ao3405-vb-etched.step / ao3405-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao3405-vb.step / ao3405-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 77e60c4c7beb24ff, retrieved 2026-11-13, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF

AO3405-VB

Verified AO3405-VB

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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