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AO3405-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

AO3405-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for VGS of ±20 V maximum with a threshold of -0.5 to -2.0 V at ID = -250 µA.
2 S passive Source of the P-channel MOSFET, with continuous source-drain body diode current of -2.1 A at TC = 25 °C.
3 D passive Drain of the P-channel MOSFET, rated for VDS of -30 V and continuous drain current of -5.6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID -5.6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -5.4 A TA = 25 °C, b,c 1
Continuous Drain Current ID -4.3 A TA = 70 °C, b,c 1
Pulsed Drain Current IDM -18 A t = 100 µs 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A TA = 25 °C, b,c 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C, b,c 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C, b,c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 75 100 °C/W t ≤ 5 s, b,d 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 40 50 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -2.5 A VDS ≤ -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.046 Ω VGS = -10 V, ID = -4.4 A 2
Drain-Source On-State Resistance RDS(on) 0.049 Ω VGS = -6 V, ID = -4 A 2
Drain-Source On-State Resistance RDS(on) 0.054 Ω VGS = -4.5 V, ID = -3.6 A 2
Forward Transconductance gfs 18 S VDS = -15 V, ID = -3.4 A 2
Total Gate Charge Qg 24 36 nC VDS = -15 V, VGS = -10 V, ID = -5.4 A 2
Total Gate Charge Qg 11.4 17 nC VDS = -15 V, VGS = -4.5 V, ID = -5.4 A 2
Gate Resistance Rg 1.5 7.7 15.4 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 13 20 ns VDD = -15 V, RL = 3.5 Ω, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 38 57 ns VDD = -15 V, RL = 3.5 Ω, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 6 12 ns VDD = -15 V, RL = 3.5 Ω, VGEN = -10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 28 42 ns VDD = -15 V, RL = 3.5 Ω, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 16 24 ns VDD = -15 V, RL = 3.5 Ω, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = -15 V, RL = 3.5 Ω, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 10 20 ns VDD = -15 V, RL = 3.5 Ω, VGEN = -4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -80 A t = 100 µs 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -4.3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 15 23 ns IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 7 14 nC IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ -19 mV/°C ID = -250 µA 2
Gate-Source Charge Qgs 3.4 nC 2
Gate-Drain Charge Qgd 3.8 nC 2
Reverse Recovery Fall Time ta 8 ns 2
Reverse Recovery Rise Time tb 7 ns 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: AO3405-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: ao3405-vb-etched.step / ao3405-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao3405-vb.step / ao3405-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 77e60c4c7beb24ff, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF