component
SI1307EDL-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-323(SC-70). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSI1307EDL-T1-GE3-VB
VBsemi Elec · MOSFETs · SOT-323(SC-70)
SI1307EDL-T1-GE3-VB from VBsemi Elec, in a SOT-323(SC-70). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; the datasheet gives the gate-source voltage limit as ±12 V and the gate-source threshold as -0.45 V to -1.5 V. |
| 2 | S | passive | Source of the P-channel MOSFET; the datasheet gives the body diode data (pulse forward current -6 A, forward voltage -0.8 V to -1.2 V at IF = -0.7 A) but no separate per-pin limit. |
| 3 | D | passive | Drain of the P-channel MOSFET; the datasheet limits drain-source voltage to -20 V and lists continuous drain current of -3.1 A at TC = 25 °C in the product summary. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-323(SC-70) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -1.4 | A | TA = 25 °C, note b | 1 | ||
| Continuous Drain Current | ID | -1.1 | A | TA = 70 °C, note b | 1 | ||
| Pulsed Drain Current | IDM | -6 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -0.4 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -0.3 | A | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.3 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.4 | W | TA = 25 °C, note a | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -50 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | 1 | ||||
| Gate-Source Threshold Voltage | VGS(th) | -0.45 | -1.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -2 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.08 | Ω | VGS = -4.5 V, ID = -1.4 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.1 | Ω | VGS = -2.5 V, ID = -1.2 A | 2 | ||
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IF = -0.7 A | 2 | |
| Turn-On Delay Time (VGEN = -4.5 V) | td(on) | 12 | 20 | ns | VDD = -10 V, RL = 9.1 Ω, ID = -1.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise Time (VGEN = -4.5 V) | tr | 20 | 30 | ns | VDD = -10 V, RL = 9.1 Ω, ID = -1.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall Time (VGEN = -4.5 V) | tf | 9 | 18 | ns | VDD = -10 V, RL = 9.1 Ω, ID = -1.1 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time (VGEN = -8 V) | td(on) | 5 | 10 | ns | VDD = -10 V, RL = 9.1 Ω, ID = -1.1 A, VGEN = -8 V, Rg = 1 Ω | 2 | |
| Rise Time (VGEN = -8 V) | tr | 10 | 20 | ns | VDD = -10 V, RL = 9.1 Ω, ID = -1.1 A, VGEN = -8 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time (VGEN = -8 V) | td(off) | 18 | 27 | ns | VDD = -10 V, RL = 9.1 Ω, ID = -1.1 A, VGEN = -8 V, Rg = 1 Ω | 2 | |
| Fall Time (VGEN = -8 V) | tf | 7 | 14 | ns | VDD = -10 V, RL = 9.1 Ω, ID = -1.1 A, VGEN = -8 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -2.4 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -6 | A | 2 | |||
| Body Diode Reverse Recovery Time | trr | 18 | 27 | ns | IF = -0.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 7 | 14 | nC | IF = -0.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Total Gate Charge | Qg | 4.3 | 6.5 | nC | VDS = -10 V, VGS = -4.5 V, ID = -1.4 A | 2 | |
| Total Gate Charge | Qg | 2.7 | 4.1 | nC | VDS = -10 V, VGS = -2.5 V, ID = -1.4 A | 2 | |
| Gate Resistance | Rg | 7 | 14 | Ω | f = 1 MHz | 2 | |
| Drain-Source Breakdown Voltage | VDS | -20 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| VDS Temperature Coefficient | VDS/TJ | -14 | mV/°C | ID = -250 µA | 2 | ||
| VGS(th) Temperature Coefficient | VGS(th)/TJ | 2.4 | mV/°C | 2 | |||
| On-State Forward Transconductance | gfs | 5 | S | VDS = -5 V, ID = -1.4 A | 2 | ||
| Input Capacitance | Ciss | 272 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 55 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 44 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 0.7 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 1 | nC | 2 | |||
| Reverse Recovery Fall Time | ta | 7 | ns | IF = -0.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | ||
| Reverse Recovery Rise Time | tb | 11 | ns | IF = -0.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | ||
| Junction-to-Ambient Thermal Resistance (t = 10 s) | RthJA | 250 | 300 | °C/W | t = 10 s, surface mounted (notes a, b) | 2 | |
| Junction-to-Foot (Drain) Thermal Resistance (Steady State) | RthJF | 225 | 270 | °C/W | Steady state | 2 | |
| Junction-to-Ambient Thermal Resistance (Steady State) | RthJA | 360 | °C/W | Steady state, note b | 2 |
CAD (KiCad official)
- Symbol:
SI1307EDL-T1-GE3-VB - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323(SC-70) (KiCad packages3D, STEP)
- 3D model files:
si1307edl-t1-ge3-vb-etched.step/si1307edl-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si1307edl-t1-ge3-vb.step/si1307edl-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
f75f8ef89113def7, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).