component
2SA1416S-TD-E
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SA1416S-TD-E
onsemi · Bipolar (BJT) · SOT-89
2SA1416S-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; the emitter-to-base voltage is rated (-)6 V maximum (VEBO) and the base drive for the switching test is specified as IB1 and IB2. |
| 2 | Collector | passive | Collector terminal; rated (-)1 A continuous collector current (ICP (-)2 A pulse) and (-)100 V collector-to-emitter voltage (VCEO), with 1.3 W dissipation when mounted on a ceramic substrate (250 mm² × 0.8 mm) and 500 mW without it. |
| 3 | Emitter | passive | Emitter terminal of the transistor, referenced by the collector-to-emitter (VCEO (-)100 V) and emitter-to-base (VEBO (-)6 V) ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cutoff Current | ICBO | -100 | nA | VCB=(--)100V, IE=0A | 2 | ||
| Emitter Cutoff Current | IEBO | -100 | nA | VEB=(--)4V, IC=0A | 2 | ||
| DC Current Gain, rank S | hFE | 140 | 280 | VCE=(--)5V, IC=(--)100mA | 2 | ||
| Collector-to-Base Breakdown Voltage | V(BR)CBO | -120 | V | IC=(--)10μA, IE=0A | 2 | ||
| Collector-to-Emitter Breakdown Voltage | V(BR)CEO | -100 | V | IC=(--)1mA, RBE=∞ | 2 | ||
| Emitter-to-Base Breakdown Voltage | V(BR)EBO | -6 | V | IE=(--)10μA, IC=0A | 2 | ||
| Collector-to-Emitter Saturation Voltage | VCE(sat) | -0.2 | -0.6 | V | IC=(--)400mA, IB=(--)40mA | 2 | |
| Base-to-Emitter Saturation Voltage | VBE(sat) | -0.85 | -1.2 | V | IC=(--)400mA, IB=(--)40mA | 2 | |
| Collector-to-Base Voltage | VCBO | -120 | V | 1 | |||
| Collector-to-Emitter Voltage | VCEO | -100 | V | 1 | |||
| Emitter-to-Base Voltage | VEBO | -6 | V | 1 | |||
| Collector Current | IC | -1 | A | 1 | |||
| Collector Current (Pulse) | ICP | -2 | A | 1 | |||
| Collector Dissipation | PC | 500 | mW | 1 | |||
| Collector Dissipation (on ceramic substrate) | PC | 1.3 | W | When mounted on ceramic substrate (250mm2×0.8mm) | 1 | ||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SA1416S-TD-E - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sa1416s-td-e-etched.step/2sa1416s-td-e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sa1416s-td-e.step/2sa1416s-td-e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
1b34e6579ee10ab9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).