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2SA1416S-TD-E

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onsemi Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SA1416S-TD-E

onsemi · Bipolar (BJT) · SOT-89

2SA1416S-TD-E from onsemi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor; the emitter-to-base voltage is rated (-)6 V maximum (VEBO) and the base drive for the switching test is specified as IB1 and IB2.
2 Collector passive Collector terminal; rated (-)1 A continuous collector current (ICP (-)2 A pulse) and (-)100 V collector-to-emitter voltage (VCEO), with 1.3 W dissipation when mounted on a ceramic substrate (250 mm² × 0.8 mm) and 500 mW without it.
3 Emitter passive Emitter terminal of the transistor, referenced by the collector-to-emitter (VCEO (-)100 V) and emitter-to-base (VEBO (-)6 V) ratings.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Cutoff Current ICBO -100 nA VCB=(--)100V, IE=0A 2
Emitter Cutoff Current IEBO -100 nA VEB=(--)4V, IC=0A 2
DC Current Gain, rank S hFE 140 280 VCE=(--)5V, IC=(--)100mA 2
Collector-to-Base Breakdown Voltage V(BR)CBO -120 V IC=(--)10μA, IE=0A 2
Collector-to-Emitter Breakdown Voltage V(BR)CEO -100 V IC=(--)1mA, RBE=∞ 2
Emitter-to-Base Breakdown Voltage V(BR)EBO -6 V IE=(--)10μA, IC=0A 2
Collector-to-Emitter Saturation Voltage VCE(sat) -0.2 -0.6 V IC=(--)400mA, IB=(--)40mA 2
Base-to-Emitter Saturation Voltage VBE(sat) -0.85 -1.2 V IC=(--)400mA, IB=(--)40mA 2
Collector-to-Base Voltage VCBO -120 V 1
Collector-to-Emitter Voltage VCEO -100 V 1
Emitter-to-Base Voltage VEBO -6 V 1
Collector Current IC -1 A 1
Collector Current (Pulse) ICP -2 A 1
Collector Dissipation PC 500 mW 1
Collector Dissipation (on ceramic substrate) PC 1.3 W When mounted on ceramic substrate (250mm2×0.8mm) 1
Junction Temperature Tj 150 °C 1
Storage Temperature Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: 2SA1416S-TD-E
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sa1416s-td-e-etched.step / 2sa1416s-td-e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sa1416s-td-e.step / 2sa1416s-td-e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 1b34e6579ee10ab9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF