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BSS670S2L H6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS670S2L H6327
Infineon Technologies · MOSFETs · SOT-23
BSS670S2L H6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement-mode MOSFET, rated for a gate source voltage VGS of ±20 V. |
| 2 | Source | passive | Source terminal, the reference for the gate source voltage VGS and the drain current ID. |
| 3 | Drain | passive | Drain terminal, rated for a continuous drain current ID of 0.54 A at TA=25°C, and the pin at which the junction-to-soldering-point thermal resistance RthJS (290 K/W max) is specified. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 0.54 | A | TA=25°C | 1 | ||
| Continuous drain current | ID | 0.43 | A | TA=70°C | 1 | ||
| Pulsed drain current | ID puls | 2.2 | A | TA=25°C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.36 | W | TA=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Avalanche energy, single pulse | EAS | 8.1 | mJ | ID = 0.54 A, RG = 25 Ω | 1 | ||
| Thermal resistance, junction - soldering point (Pin 3) | RthJS | 290 | K/W | 2 | |||
| Thermal resistance, junction - ambient, SMD version | RthJA | 350 | K/W | @ min. footprint | 2 | ||
| Thermal resistance, junction - ambient, SMD version | RthJA | 300 | K/W | @ 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 55 | V | VGS=0, ID=1mA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.2 | 1.6 | 2 | V | VGS = VDS, ID=2.7µA | 2 |
| Zero gate voltage drain current | IDSS | 0.01 | 1 | µA | VDS=55V, VGS=0, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 0.1 | 10 | µA | VDS=55V, VGS=0, Tj=150°C | 2 | |
| Gate-source leakage current | IGSS | 1 | 100 | nA | VGS=20V, VDS=0V | 2 | |
| Drain-source on-state resistance | RDS(on) | 430 | 825 | mΩ | VGS=4.5V, ID=270mA | 2 | |
| Drain-source on-state resistance | RDS(on) | 346 | 650 | mΩ | VGS=10V, ID=270mA | 2 | |
| Transconductance | gfs | 0.6 | 1.2 | S | VDS≥2IDRDS(on)max, ID=0.54A | 3 | |
| Input capacitance | Ciss | 56 | 75 | pF | VGS=0, VDS=25V, f=1MHz | 3 | |
| Output capacitance | Coss | 13 | 18 | pF | VGS=0, VDS=25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 7 | 10 | pF | VGS=0, VDS=25V, f=1MHz | 3 | |
| Turn-on delay time | td(on) | 9 | 14 | ns | VDD=30V, VGS=4.5V, ID=0.54A, RG=130Ω | 3 | |
| Rise time | tr | 25 | 37 | ns | VDD=30V, VGS=4.5V, ID=0.54A, RG=130Ω | 3 | |
| Turn-off delay time | td(off) | 21 | 31 | ns | VDD=30V, VGS=4.5V, ID=0.54A, RG=130Ω | 3 | |
| Fall time | tf | 24 | 32 | ns | VDD=30V, VGS=4.5V, ID=0.54A, RG=130Ω | 3 | |
| Gate to source charge | Qgs | 0.19 | 0.25 | nC | VDD=40V, ID=0.54A | 3 | |
| Gate to drain charge | Qgd | 0.57 | 0.86 | nC | VDD=40V, ID=0.54A | 3 | |
| Gate charge total | Qg | 1.7 | 2.26 | nC | VDD=40V, ID=0.54A, VGS=0 to 10V | 3 | |
| Inverse diode continuous forward current | IS | 0.38 | A | TA=25°C | 3 | ||
| Inverse diode direct current, pulsed | ISM | 2.2 | A | 3 | |||
| Inverse diode forward voltage | VSD | 0.8 | 1.1 | V | VGS=0, IF=0.54A | 3 | |
| Reverse recovery time | trr | 51 | 64 | ns | VR=30V, IF=lS, diF/dt=100A/µs | 3 | |
| Reverse recovery charge | Qrr | 22 | 28 | nC | VR=30V, IF=lS, diF/dt=100A/µs | 3 | |
| Gate plateau voltage | V(plateau) | 3.1 | V | VDD=40V, ID=0.54A | 3 |
CAD (KiCad official)
- Symbol:
BSS670S2L H6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss670s2l-h6327-etched.step/bss670s2l-h6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss670s2l-h6327.step/bss670s2l-h6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
c760d8e924a8b859, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).