component
SE2N60B
Public Made by Adomby adom
SINO IC MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSE2N60B
SINO IC · MOSFETs · TO-252
SE2N60B from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS maximum ±30 V, gate threshold VGS(th) 2.5 V min to 4.5 V max at VDS=VGS, ID=250μA. |
| 2 | D | passive | Drain (also the tab); VDS rated 600 V, continuous drain current 2 A and pulsed 8 A. |
| 3 | S | passive | Source; body diode continuous current IS 2 A, pulsed ISM 8 A, forward voltage VSD 1.4 V max at IS=2A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 600 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Drain Current Continuous | ID | 2 | A | 1 | |||
| Drain Current Pulsed | 8 | A | 1 | ||||
| Avalanche Energy Single Pulsed | EAS | 180 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | Dv/dt | 4.5 | V/ns | 1 | |||
| Power Dissipation | PD | 33 | W | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 62.5 | ℃/W | t≦10s | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250μA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS=600V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=30V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS= VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.4 | 4.3 | Ω | VGS=10V, ID=1A | 2 | |
| Input Capacitance | Ciss | 520 | 680 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | |
| Output Capacitance | Coss | 60 | 80 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 8 | 10.5 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | |
| Total Gate Charge | Qg | 10.5 | 13.5 | nC | VGS=10V, VDS=520V, ID=2A | 2 | |
| Turn-On Delay Time | td(on) | 11 | 33 | ns | VDS=325V, RGEN=25Ω, ID=2A | 2 | |
| Turn-Off Delay Time | td(off) | 45 | 90 | ns | VDS=325V, RGEN=25Ω, ID=2A | 2 | |
| Turn-On Rise Time | td(r) | 40 | 88 | ns | VDS=325V, RGEN=25Ω, ID=2A | 2 | |
| Turn-Off Fall Time | td(f) | 48 | 100 | ns | VDS=325V, RGEN=25Ω, ID=2A | 2 | |
| Max Drain-Source Diode Current | IS | 2 | A | 2 | |||
| Max Pulse Drain-Source Current | ISM | 8 | A | 2 |
CAD (KiCad official)
- Symbol:
SE2N60B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
se2n60b-etched.step/se2n60b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se2n60b.step/se2n60b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (6 pp, sha256
7b5577fe1656654d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).