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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	17d ago
viewers	se2n60b: viewers · Ray	17d ago
package.json	Publish 0.1.0 · Ray	17d ago
page.json	Set visibility: public · Ray	17d ago
README.md	Publish 0.1.0 · Ray	17d ago
se2n60b-etched.glb	Publish 0.1.0 · Ray	17d ago
se2n60b-etched.step	se2n60b: factory component page (tier=lcsc) · Ray	17d ago
se2n60b-hero.glb	se2n60b: hero GLB from the etched model (keeps the MPN mark) · Ray	17d ago
se2n60b-hero.overlay.json	Publish 0.1.0 · Ray	17d ago
se2n60b.glb	Publish 0.1.0 · Ray	17d ago
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se2n60b.kicad_sym	Publish 0.1.0 · Ray	17d ago
se2n60b.lbr	Publish 0.1.0 · Ray	17d ago
se2n60b.step	Publish 0.1.0 · Ray	17d ago

SE2N60B

SINO IC · MOSFETs · TO-252

SE2N60B from SINO IC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; VGS maximum ±30 V, gate threshold VGS(th) 2.5 V min to 4.5 V max at VDS=VGS, ID=250μA.
2	D	passive	Drain (also the tab); VDS rated 600 V, continuous drain current 2 A and pulsed 8 A.
3	S	passive	Source; body diode continuous current IS 2 A, pulsed ISM 8 A, forward voltage VSD 1.4 V max at IS=2A.

Key specifications

Parameter	Value
Manufacturer	SINO IC
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			600	V		1
Gate-Source Voltage	VGS	-30		30	V		1
Drain Current Continuous	ID			2	A		1
Drain Current Pulsed				8	A		1
Avalanche Energy Single Pulsed	EAS			180	mJ		1
Peak Diode Recovery dv/dt	Dv/dt			4.5	V/ns		1
Power Dissipation	PD			33	W		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance Junction to Ambient	RθJA			62.5	℃/W	t≦10s	1
Drain-Source Breakdown Voltage	BVDSS	600			V	VGS=0V, ID=250μA	2
Drain to Source Leakage Current	IDSS			1	μA	VDS=600V, VGS=0V	2
Gate-Body Leakage Current	IGSS			100	nA	VGS=30V	2
Gate Threshold Voltage	VGS(th)	2.5		4.5	V	VDS= VGS, ID=250μA	2
Static Drain-Source On-Resistance	RDS(ON)		3.4	4.3	Ω	VGS=10V, ID=1A	2
Input Capacitance	Ciss		520	680	pF	VGS=0V, VDS=25V, f=1MHz	2
Output Capacitance	Coss		60	80	pF	VGS=0V, VDS=25V, f=1MHz	2
Reverse Transfer Capacitance	Crss		8	10.5	pF	VGS=0V, VDS=25V, f=1MHz	2
Total Gate Charge	Qg		10.5	13.5	nC	VGS=10V, VDS=520V, ID=2A	2
Turn-On Delay Time	td(on)		11	33	ns	VDS=325V, RGEN=25Ω, ID=2A	2
Turn-Off Delay Time	td(off)		45	90	ns	VDS=325V, RGEN=25Ω, ID=2A	2
Turn-On Rise Time	td(r)		40	88	ns	VDS=325V, RGEN=25Ω, ID=2A	2
Turn-Off Fall Time	td(f)		48	100	ns	VDS=325V, RGEN=25Ω, ID=2A	2
Max Drain-Source Diode Current	IS			2	A		2
Max Pulse Drain-Source Current	ISM			8	A		2

CAD (KiCad official)

Symbol: SE2N60B
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: se2n60b-etched.step / se2n60b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se2n60b.step / se2n60b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: SINO IC datasheet (6 pp, sha256 7b5577fe1656654d, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF