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HAF1004-90STL-E-VB

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by Ray

VBsemi Elec MOSFETs, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.

componenttransistors-thyristorshaf1004-90stl-e-vb
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

HAF1004-90STL-E-VB

VBsemi Elec · MOSFETs · TO-252

HAF1004-90STL-E-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate terminal that controls conduction of the P-channel MOSFET channel. Maximum VGS = ±20 V; typical VGS(th) = -2.0 V (min -1.0 V, max -3.0 V).
2 D passive Drain. Drain of the P-channel MOSFET; also connected to the exposed tab of the TO-252 package. Rated VDS = -60 V, ID = -30 A continuous at TC = 25 °C.
3 S passive Source. Source terminal of the P-channel MOSFET. Body-diode anode with respect to the drain (source-drain diode VSD typ -0.9 V, max -1.3 V at IF = -2 A).
4 D (Tab) passive Exposed thermal tab, electrically connected to the Drain. Used for heat dissipation to the PCB copper pour; PD = 34 W at TC = 25 °C, RthJC = 5 °C/W typical.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • HAF1004-90STL-E-VB

CAD (KiCad official)

  • Symbol: HAF1004-90STL-E-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 dd890faa750142da, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF