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HAF1004-90STL-E-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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Contents
README
markdownHAF1004-90STL-E-VB
VBsemi Elec · MOSFETs · TO-252
HAF1004-90STL-E-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated gate terminal that controls conduction of the P-channel MOSFET channel. Maximum VGS = ±20 V; typical VGS(th) = -2.0 V (min -1.0 V, max -3.0 V). |
| 2 | D | passive | Drain. Drain of the P-channel MOSFET; also connected to the exposed tab of the TO-252 package. Rated VDS = -60 V, ID = -30 A continuous at TC = 25 °C. |
| 3 | S | passive | Source. Source terminal of the P-channel MOSFET. Body-diode anode with respect to the drain (source-drain diode VSD typ -0.9 V, max -1.3 V at IF = -2 A). |
| 4 | D (Tab) | passive | Exposed thermal tab, electrically connected to the Drain. Used for heat dissipation to the PCB copper pour; PD = 34 W at TC = 25 °C, RthJC = 5 °C/W typical. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Ordering variants
Same part, different packaging or reel option.
HAF1004-90STL-E-VB
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TC = 25 °C | ID | -30 | A | TJ = 175 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current (TJ = 175 °C), TC = 100 °C | ID | -25 | A | TJ = 175 °C, TC = 100 °C | 1 | ||
| Continuing Source Current (Diode Conduction) | IS | -20 | A | 1 | |||
| Avalanche Current | IAS | -20 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 7.2 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation, TC = 25 °C | PD | 34 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, TA = 25 °C | PD | 4 | W | TA = 25 °C, surface mounted on 1" x 1" FR-4 board | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient, t ≤ 10 sec | RthJA | 20 | 25 | °C/W | t ≤ 10 sec | 1 | |
| Junction-to-Ambient, steady state | RthJA | 62 | 75 | °C/W | Steady state | 1 | |
| Junction-to-Case | RthJC | 5 | 6 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 125 °C | IDSS | -50 | µA | VDS = -60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 175 °C | IDSS | -150 | µA | VDS = -60 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.061 | Ω | VGS = -10 V, ID = -5 A | 2 | ||
| Drain-Source On-State Resistance, TJ = 125 °C | rDS(on) | 0.1 | Ω | VGS = -10 V, ID = -5 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance, TJ = 175 °C | rDS(on) | 0.15 | Ω | VGS = -10 V, ID = -5 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.072 | Ω | VGS = -4.5 V, ID = -2 A | 2 | ||
| Forward Voltage | VSD | -1.3 | -0.9 | V | IF = -2 A, VGS = 0 V | 2 | |
| Forward Transconductance | gfs | 8 | S | VDS = -15 V, ID = -5 A | 2 | ||
| Input Capacitance | Ciss | 1000 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 120 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 100 | pF | 2 | |||
| Total Gate Charge | Qg | 10 | nC | VDS = -30 V, VGS = -10 V, ID = -8.4 A | 2 | ||
| Gate-Source Charge | Qgs | 2.1 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 3.2 | nC | 2 | |||
| Gate Resistance | Rg | 8 | Ω | f = 1 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 6 | ns | VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω | 2 | ||
| Rise Time | tr | 15 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 16 | ns | 2 | |||
| Fall Time | tf | 8 | ns | 2 | |||
| Reverse Recovery Time | trr | 50 | ns | IF = -8 A, di/dt = 100 A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 80 | nC | 2 |
CAD (KiCad official)
- Symbol:
HAF1004-90STL-E-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
haf1004-90stl-e-vb-etched.step/haf1004-90stl-e-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);haf1004-90stl-e-vb.step/haf1004-90stl-e-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (None pp, sha256
dd890faa750142da, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).