component

BC857DW

Public Made by Adom

by adom

CBI Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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BC857DW

CBI · Bipolar Transistors - BJT · SOT-363

BC857DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of PNP transistor 1 (Q1); VEBO max -5 V.
2 B1 passive Base of PNP transistor 1 (Q1); VBE -0.6 to -0.75 V at VCE=-5 V, IC=-2 mA.
3 C2 passive Collector of PNP transistor 2 (Q2); VCEO max -45 V, continuous IC max -0.2 A.
4 E2 passive Emitter of PNP transistor 2 (Q2); VEBO max -5 V.
5 B2 passive Base of PNP transistor 2 (Q2); VBE -0.6 to -0.75 V at VCE=-5 V, IC=-2 mA.
6 C1 passive Collector of PNP transistor 1 (Q1); VCEO max -45 V, continuous IC max -0.2 A.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-363
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -50 V Ic=-10µA,IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -45 V Ic=-10mA,IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA,IC=0 1
Collector cut-off current ICBO -15 nA VCB=-30V,IE=0 1
DC current gain hFE 125 630 VCE=-5V,IC=-2mA 1
Collector-emitter saturation voltage (1) VCE(sat)(1) -0.3 V IC=-10mA,IB=-0.5mA 1
Collector-emitter saturation voltage (2) VCE(sat)(2) -0.65 V IC=-100mA,IB=-5mA 1
Base-emitter voltage (1) VBE(1) -0.6 -0.75 V VCE=-5V,IC=-2mA 1
Base-emitter voltage (2) VBE(2) -0.82 V VCE=-5V,IC=-10mA 1
Transition frequency fT 200 MHz VCE=-5V,IC=-10mA,f=100MHz 1
Collector output capacitance Cob 3.5 pF VCB=-10V,IE=0,f=1MHz 1
Noise figure NF 2.5 dB VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz 1
Collector-Base Voltage VCBO -50 V Ta=25℃ 1
Collector-Emitter Voltage VCEO -45 V Ta=25℃ 1
Emitter-Base Voltage VEBO -5 V Ta=25℃ 1
Collector Current -Continuous IC -0.2 A Ta=25℃ 1
Collector Power Dissipation PC 0.3 W Ta=25℃ 1
Junction Temperature TJ 150 ℃ Ta=25℃ 1
Storage Temperature Tstg -55 150 ℃ Ta=25℃ 1
Thermal Resistance from Junction to Ambient RθJA 417 ℃/W Ta=25℃ 1

CAD (KiCad official)

  • Symbol: BC857DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bc857dw-etched.step / bc857dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc857dw.step / bc857dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 7b3b0f62fea80721, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF