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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	9d ago
viewers	bc857dw: viewers · Ray	9d ago
bc857dw-etched.glb	Publish 0.1.0 · Ray	9d ago
bc857dw-etched.step	bc857dw: factory component page (tier=lcsc) · Ray	9d ago
bc857dw-hero.glb	bc857dw: hero GLB from the etched model (keeps the MPN mark) · Ray	9d ago
bc857dw-hero.overlay.json	Publish 0.1.0 · Ray	9d ago
bc857dw.glb	Publish 0.1.0 · Ray	9d ago
bc857dw.kicad_mod	Publish 0.1.0 · Ray	9d ago
bc857dw.kicad_sym	Publish 0.1.0 · Ray	9d ago
bc857dw.lbr	Publish 0.1.0 · Ray	9d ago
bc857dw.step	Publish 0.1.0 · Ray	9d ago
package.json	Publish 0.1.0 · Ray	9d ago
page.json	Set visibility: public · Ray	9d ago
README.md	Publish 0.1.0 · Ray	9d ago

BC857DW

CBI · Bipolar Transistors - BJT · SOT-363

BC857DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	E1	passive	Emitter of PNP transistor 1 (Q1); VEBO max -5 V.
2	B1	passive	Base of PNP transistor 1 (Q1); VBE -0.6 to -0.75 V at VCE=-5 V, IC=-2 mA.
3	C2	passive	Collector of PNP transistor 2 (Q2); VCEO max -45 V, continuous IC max -0.2 A.
4	E2	passive	Emitter of PNP transistor 2 (Q2); VEBO max -5 V.
5	B2	passive	Base of PNP transistor 2 (Q2); VBE -0.6 to -0.75 V at VCE=-5 V, IC=-2 mA.
6	C1	passive	Collector of PNP transistor 1 (Q1); VCEO max -45 V, continuous IC max -0.2 A.

Key specifications

Parameter	Value
Manufacturer	CBI
Package	SOT-363
Category	Transistors
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-base breakdown voltage	V(BR)CBO	-50			V	Ic=-10µA,IE=0	1
Collector-emitter breakdown voltage	V(BR)CEO	-45			V	Ic=-10mA,IB=0	1
Emitter-base breakdown voltage	V(BR)EBO	-5			V	IE=-10µA,IC=0	1
Collector cut-off current	ICBO			-15	nA	VCB=-30V,IE=0	1
DC current gain	hFE	125		630		VCE=-5V,IC=-2mA	1
Collector-emitter saturation voltage (1)	VCE(sat)(1)			-0.3	V	IC=-10mA,IB=-0.5mA	1
Collector-emitter saturation voltage (2)	VCE(sat)(2)			-0.65	V	IC=-100mA,IB=-5mA	1
Base-emitter voltage (1)	VBE(1)	-0.6		-0.75	V	VCE=-5V,IC=-2mA	1
Base-emitter voltage (2)	VBE(2)			-0.82	V	VCE=-5V,IC=-10mA	1
Transition frequency	fT	200			MHz	VCE=-5V,IC=-10mA,f=100MHz	1
Collector output capacitance	Cob			3.5	pF	VCB=-10V,IE=0,f=1MHz	1
Noise figure	NF			2.5	dB	VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz	1
Collector-Base Voltage	VCBO			-50	V	Ta=25℃	1
Collector-Emitter Voltage	VCEO			-45	V	Ta=25℃	1
Emitter-Base Voltage	VEBO			-5	V	Ta=25℃	1
Collector Current -Continuous	IC			-0.2	A	Ta=25℃	1
Collector Power Dissipation	PC			0.3	W	Ta=25℃	1
Junction Temperature	TJ			150	℃	Ta=25℃	1
Storage Temperature	Tstg	-55		150	℃	Ta=25℃	1
Thermal Resistance from Junction to Ambient	RθJA		417		℃/W	Ta=25℃	1

CAD (KiCad official)

Symbol: BC857DW
Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
3D model: SOT-363 (KiCad packages3D, STEP)
3D model files: bc857dw-etched.step / bc857dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc857dw.step / bc857dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: CBI datasheet (3 pp, sha256 7b3b0f62fea80721, retrieved 2026-10-27, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF