component
HFMMT720TA
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHFMMT720TA
HXY MOSFET · Bipolar (BJT) · SOT-23
HFMMT720TA from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; emitter-base voltage rating is -5 V and collector current is limited to -0.5 A continuous (-4 A peak pulse). |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base breakdown V(BR)EBO is -5 V minimum at IE=-100 µA. |
| 3 | C | passive | Collector; collector-emitter voltage rating is -40 V and collector-base voltage rating is -40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 | V | Ta=25℃ | 1 | ||
| Collector-Emitter Voltage | VCEO | -40 | V | Ta=25℃ | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | Ta=25℃ | 1 | ||
| Collector Current | IC | -0.5 | A | Ta=25℃ | 1 | ||
| Peak Pulse Current | ICM | -4 | A | Ta=25℃ | 1 | ||
| Collector Power Dissipation | PC | 350 | mW | Ta=25℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RΘJA | 500 | ℃/W | 1 | |||
| Operation Junction And Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC= -10mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE= -100μA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-35V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB= -4V, IC=0 | 2 | ||
| DC current gain | hFE(1) | 300 | VCE= -2V, IC=-10mA | 2 | |||
| DC current gain | hFE(3) | 180 | VCE=-2V, IC=-1A | 2 | |||
| DC current gain | hFE(4) | 60 | VCE=-2V, IC=-1.5A | 2 | |||
| DC current gain | hFE(5) | 12 | VCE=-2V, IC=-3A | 2 | |||
| Collector-emitter saturation voltage | VCE(sat)(1) | -40 | mV | IC=-0.1A, IB=-10mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | -220 | mV | IC=-1A, IB=-50mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat)(3) | -330 | mV | IC=-1.5A, IB=-100mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC=-1.5A, IB= -75mA | 2 | ||
| Base-emitter voltage | VBE(on) | -1 | V | VCE=-2V, IC=-1.5A | 2 | ||
| Transition frequency | fT | 150 | MHz | VCE=-10V,IC=-50mA, f=100MHZ | 2 | ||
| Collector output capacitance | Cob | 25 | pF | VCB=-10V,f=1MHZ | 2 | ||
| Turn-on Time | t(on) | 40 | ns | VCC=-15V, IC=-0.75A, IB1= IB2=-15mA | 2 | ||
| Turn-off Time | t(off) | 435 | ns | VCC=-15V, IC=-0.75A, IB1= IB2=-15mA | 2 |
CAD (KiCad official)
- Symbol:
HFMMT720TA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
hfmmt720ta-etched.step/hfmmt720ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hfmmt720ta.step/hfmmt720ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
e79c93578471661d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).