component

HFMMT720TA

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HFMMT720TA

HXY MOSFET · Bipolar (BJT) · SOT-23

HFMMT720TA from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; emitter-base voltage rating is -5 V and collector current is limited to -0.5 A continuous (-4 A peak pulse).
2 E passive Emitter of the PNP transistor; emitter-base breakdown V(BR)EBO is -5 V minimum at IE=-100 µA.
3 C passive Collector; collector-emitter voltage rating is -40 V and collector-base voltage rating is -40 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -40 V Ta=25℃ 1
Collector-Emitter Voltage VCEO -40 V Ta=25℃ 1
Emitter-Base Voltage VEBO -5 V Ta=25℃ 1
Collector Current IC -0.5 A Ta=25℃ 1
Peak Pulse Current ICM -4 A Ta=25℃ 1
Collector Power Dissipation PC 350 mW Ta=25℃ 1
Thermal Resistance From Junction To Ambient RΘJA 500 ℃/W 1
Operation Junction And Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO -40 V IC=-100μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -40 V IC= -10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100μA, IC=0 2
Collector cut-off current ICBO -0.1 μA VCB=-35V, IE=0 2
Emitter cut-off current IEBO -0.1 μA VEB= -4V, IC=0 2
DC current gain hFE(1) 300 VCE= -2V, IC=-10mA 2
DC current gain hFE(3) 180 VCE=-2V, IC=-1A 2
DC current gain hFE(4) 60 VCE=-2V, IC=-1.5A 2
DC current gain hFE(5) 12 VCE=-2V, IC=-3A 2
Collector-emitter saturation voltage VCE(sat)(1) -40 mV IC=-0.1A, IB=-10mA 2
Collector-emitter saturation voltage VCE(sat)(2) -220 mV IC=-1A, IB=-50mA 2
Collector-emitter saturation voltage VCE(sat)(3) -330 mV IC=-1.5A, IB=-100mA 2
Base-emitter saturation voltage VBE(sat) -1 V IC=-1.5A, IB= -75mA 2
Base-emitter voltage VBE(on) -1 V VCE=-2V, IC=-1.5A 2
Transition frequency fT 150 MHz VCE=-10V,IC=-50mA, f=100MHZ 2
Collector output capacitance Cob 25 pF VCB=-10V,f=1MHZ 2
Turn-on Time t(on) 40 ns VCC=-15V, IC=-0.75A, IB1= IB2=-15mA 2
Turn-off Time t(off) 435 ns VCC=-15V, IC=-0.75A, IB1= IB2=-15mA 2

CAD (KiCad official)

  • Symbol: HFMMT720TA
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hfmmt720ta-etched.step / hfmmt720ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hfmmt720ta.step / hfmmt720ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 e79c93578471661d, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF