component
YJS10G06A
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Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJS10G06A
Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8
YJS10G06A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied internally with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied internally with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied internally with pins 1 and 2. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; VGS rated ±20 V max, VGS(th) 1 V min to 3 V max at ID=250 µA. |
| 5 | D | passive | Drain terminal, tied internally with pins 6, 7 and 8; VDS 60 V max. |
| 6 | D | passive | Drain terminal, tied internally with pins 5, 7 and 8; VDS 60 V max. |
| 7 | D | passive | Drain terminal, tied internally with pins 5, 6 and 8; VDS 60 V max. |
| 8 | D | passive | Drain terminal, tied internally with pins 5, 6 and 7; VDS 60 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 60 | V | 1 | |||
| Gate-source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 10 | A | TA=25℃ | 1 | ||
| Drain Current | ID | 6 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Avalanche energy | EAS | 84 | mJ | TJ=25℃, VDD=50V, VG=10V, RG=25Ω, L=1mH, IAS=13A (note B) | 1 | ||
| Total Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 1 | W | TA=100℃ | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 40 | 50 | ℃/W | Steady-State; note D: 1 in2 FR-4 board, 2oz copper, still air, TA=25℃ | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=60V, VGS=0V, Tj=150℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.85 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 11 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | IS=10A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 10 | A | 2 |
CAD (KiCad official)
- Symbol:
YJS10G06A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
yjs10g06a-etched.step/yjs10g06a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjs10g06a.step/yjs10g06a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (8 pp, sha256
5f91ac440b228aa8, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).