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YJS10G06A

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Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJS10G06A

Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8

YJS10G06A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source terminal of the N-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source terminal of the N-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate terminal of the N-channel MOSFET; VGS rated ±20 V max, VGS(th) 1 V min to 3 V max at ID=250 µA.
5 D passive Drain terminal, tied internally with pins 6, 7 and 8; VDS 60 V max.
6 D passive Drain terminal, tied internally with pins 5, 7 and 8; VDS 60 V max.
7 D passive Drain terminal, tied internally with pins 5, 6 and 8; VDS 60 V max.
8 D passive Drain terminal, tied internally with pins 5, 6 and 7; VDS 60 V max.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 60 V 1
Gate-source Voltage VGS -20 20 V 1
Drain Current ID 10 A TA=25℃ 1
Drain Current ID 6 A TA=100℃ 1
Pulsed Drain Current IDM 100 A 1
Avalanche energy EAS 84 mJ TJ=25℃, VDD=50V, VG=10V, RG=25Ω, L=1mH, IAS=13A (note B) 1
Total Power Dissipation PD 2.5 W TA=25℃ 1
Total Power Dissipation PD 1 W TA=100℃ 1
Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 40 50 ℃/W Steady-State; note D: 1 in2 FR-4 board, 2oz copper, still air, TA=25℃ 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS=60V, VGS=0V, Tj=150℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.85 3 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 8.5 11 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 11 15 mΩ VGS=4.5V, ID=8A 2
Diode Forward Voltage VSD 0.85 1.2 V IS=10A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 10 A 2

CAD (KiCad official)

  • Symbol: YJS10G06A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: yjs10g06a-etched.step / yjs10g06a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjs10g06a.step / yjs10g06a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (8 pp, sha256 5f91ac440b228aa8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF