# YJS10G06A

**Yangzhou Yangjie Elec Tech** · MOSFETs · SOP-8

YJS10G06A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied internally with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied internally with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied internally with pins 1 and 2. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; VGS rated ±20 V max, VGS(th) 1 V min to 3 V max at ID=250 µA. |
| 5 | D | passive | Drain terminal, tied internally with pins 6, 7 and 8; VDS 60 V max. |
| 6 | D | passive | Drain terminal, tied internally with pins 5, 7 and 8; VDS 60 V max. |
| 7 | D | passive | Drain terminal, tied internally with pins 5, 6 and 8; VDS 60 V max. |
| 8 | D | passive | Drain terminal, tied internally with pins 5, 6 and 7; VDS 60 V max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current | ID |  |  | 10 | A | TA=25℃ | 1 |
| Drain Current | ID |  |  | 6 | A | TA=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 100 | A |  | 1 |
| Avalanche energy | EAS |  |  | 84 | mJ | TJ=25℃, VDD=50V, VG=10V, RG=25Ω, L=1mH, IAS=13A (note B) | 1 |
| Total Power Dissipation | PD |  |  | 2.5 | W | TA=25℃ | 1 |
| Total Power Dissipation | PD |  |  | 1 | W | TA=100℃ | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA |  | 40 | 50 | ℃/W | Steady-State; note D: 1 in2 FR-4 board, 2oz copper, still air, TA=25℃ | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS= 0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS=60V, VGS=0V, Tj=150℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS= ±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.85 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8.5 | 11 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11 | 15 | mΩ | VGS=4.5V, ID=8A | 2 |
| Diode Forward Voltage | VSD |  | 0.85 | 1.2 | V | IS=10A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 10 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `YJS10G06A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `yjs10g06a-etched.step` / `yjs10g06a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjs10g06a.step` / `yjs10g06a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](docs/yjs10g06a-datasheet.pdf) (8 pp, sha256 `5f91ac440b228aa8`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjs10g06a-datasheet.pdf)