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HESDNC12VB1AF-A

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HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttvs-fuse-board level protectionhesdnc12vb1af-afactory-2.0.0extractor-text

Verified HESDNC12VB1AF-A

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 2 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HESDNC12VB1AF-A · DFN1006-2L · 2 pins
  • ✓copper: 2 copper pads, none touching another net
  • ✓datasheet: unpolarised two-terminal part: pins 1 and 2 by library convention, no names to check
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: D_SOD-882
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-nqk12i3l/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 2 pins = 2 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 2 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ hesdnc12vb1af-a.kicad_sym✓ hesdnc12vb1af-a.kicad_mod✓ hesdnc12vb1af-a.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

HESDNC12VB1AF-A

HXY MOSFET · ESD Protection Devices · DFN1006-2L

HESDNC12VB1AF-A from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Bi-directional ESD protection line terminal (12 V VRWM max, 13.3 V min breakdown at 1 mA); connect to the protected signal line, interchangeable with pin 2.
2 2 passive Bi-directional ESD protection line terminal (12 V VRWM max, 13.3 V min breakdown at 1 mA); connect to ground or the protected line, interchangeable with pin 1.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category TVS/Fuse/Board Level Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse working voltage VRWM 12 V 2
Breakdown voltage VBR 13.3 V @ IT = 1.0 mA 2
Clamping voltage VC 17 V @ IPP = 8 A 2
Maximum peak pulse current IPP 8 A Surge waveform per Figure 1 2
Peak pulse power PPP 140 W tp = 8/20 µs, Tamb=25°C 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage temperature range Tstg -55 150 °C 1
Operating temperature range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 ESD air discharge -20 20 kV air discharge 1
IEC61000-4-2 ESD contact discharge -20 20 kV contact discharge 1
Capacitance C 8 pF 2

CAD (KiCad official)

  • Symbol: HESDNC12VB1AF-A
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 a2a0bf0ac47e4992, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF