component
HESDNC12VB1AF-A
Public Made by Adomby adom
HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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HESDNC12VB1AF-A
HXY MOSFET · ESD Protection Devices · DFN1006-2L
HESDNC12VB1AF-A from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection line terminal (12 V VRWM max, 13.3 V min breakdown at 1 mA); connect to the protected signal line, interchangeable with pin 2. |
| 2 | 2 | passive | Bi-directional ESD protection line terminal (12 V VRWM max, 13.3 V min breakdown at 1 mA); connect to ground or the protected line, interchangeable with pin 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working voltage | VRWM | 12 | V | 2 | |||
| Breakdown voltage | VBR | 13.3 | V | @ IT = 1.0 mA | 2 | ||
| Clamping voltage | VC | 17 | V | @ IPP = 8 A | 2 | ||
| Maximum peak pulse current | IPP | 8 | A | Surge waveform per Figure 1 | 2 | ||
| Peak pulse power | PPP | 140 | W | tp = 8/20 µs, Tamb=25°C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | 10 s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -20 | 20 | kV | air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -20 | 20 | kV | contact discharge | 1 | ||
| Capacitance | C | 8 | pF | 2 |
CAD (KiCad official)
- Symbol:
HESDNC12VB1AF-A - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
a2a0bf0ac47e4992, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).