component
MMBT5401S
Public Made by Adomby adom
FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT5401S
FOSAN · Bipolar (BJT) · SOT-23
MMBT5401S from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor, at the bottom-left of the package symbol; VEBO is limited to -5 V. |
| 2 | E | passive | Emitter of the PNP transistor, at the bottom-right of the package symbol; VEBO is limited to -5 V. |
| 3 | C | passive | Collector of the PNP transistor, the single pin on the top side; VCBO is -160 V, VCEO is -150 V and IC is -600 mA maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -160 | V | IC= -100µA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -150 | V | IC= -1mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE= -100µA, IC=0 | 2 | ||
| Collector-Base Leakage Current | ICBO | -100 | nA | VCB= -160V, IE=0 | 2 | ||
| Collector-Emitter Cut-off Current (punch-through) | ICES | -100 | nA | VCE= -120V, IB=0 | 2 | ||
| Emitter-Base Leakage Current | IEBO | -100 | nA | VEB= -5V, IC=0 | 2 | ||
| DC Current Gain | HFE(1) | 80 | VCE= -5V, IC= -1mA | 2 | |||
| DC Current Gain | HFE(2) | 100 | 300 | VCE= -5V, IC= -10mA | 2 | ||
| DC Current Gain Ratio (HFE(1)/HFE(2)) | 0.8 | 2 | |||||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | V | IC= -50mA, IB= -5mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1 | V | IC= -50mA, IB= -5mA | 2 | ||
| Base-Emitter On Voltage | VBE(on) | -1 | V | IC= -50mA, IB= -5mA | 2 | ||
| Transition Frequency | fT | 100 | MHZ | VCE= -10V, IC= -10mA | 2 | ||
| Collector Power Dissipation (Ta=25°C) | PC | 300 | mW | Ta=25℃ | 1 | ||
| Collector-Base Voltage | VCBO | -160 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -150 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -600 | mA | 1 | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 417 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MMBT5401S - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt5401s-etched.step/mmbt5401s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt5401s.step/mmbt5401s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (4 pp, sha256
e0d415af361ca369, retrieved 2026-10-17, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).