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MMBT5401S

Public Made by Adom

by adom

FOSAN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMBT5401S

FOSAN · Bipolar (BJT) · SOT-23

MMBT5401S from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor, at the bottom-left of the package symbol; VEBO is limited to -5 V.
2 E passive Emitter of the PNP transistor, at the bottom-right of the package symbol; VEBO is limited to -5 V.
3 C passive Collector of the PNP transistor, the single pin on the top side; VCBO is -160 V, VCEO is -150 V and IC is -600 mA maximum.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -160 V IC= -100µA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO -150 V IC= -1mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO -5 V IE= -100µA, IC=0 2
Collector-Base Leakage Current ICBO -100 nA VCB= -160V, IE=0 2
Collector-Emitter Cut-off Current (punch-through) ICES -100 nA VCE= -120V, IB=0 2
Emitter-Base Leakage Current IEBO -100 nA VEB= -5V, IC=0 2
DC Current Gain HFE(1) 80 VCE= -5V, IC= -1mA 2
DC Current Gain HFE(2) 100 300 VCE= -5V, IC= -10mA 2
DC Current Gain Ratio (HFE(1)/HFE(2)) 0.8 2
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC= -50mA, IB= -5mA 2
Base-Emitter Saturation Voltage VBE(sat) -1 V IC= -50mA, IB= -5mA 2
Base-Emitter On Voltage VBE(on) -1 V IC= -50mA, IB= -5mA 2
Transition Frequency fT 100 MHZ VCE= -10V, IC= -10mA 2
Collector Power Dissipation (Ta=25°C) PC 300 mW Ta=25℃ 1
Collector-Base Voltage VCBO -160 V 1
Collector-Emitter Voltage VCEO -150 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current IC -600 mA 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RΘJA 417 ℃/W 1

CAD (KiCad official)

  • Symbol: MMBT5401S
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt5401s-etched.step / mmbt5401s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt5401s.step / mmbt5401s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (4 pp, sha256 e0d415af361ca369, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF