component
2SB772SQ-P
Public Made by Adomby adom
PJSEMI Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdown2SB772SQ-P
PJSEMI · Bipolar Transistors - BJT · SOT-89
2SB772SQ-P from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the PNP transistor; maximum continuous base current is 0.6 A and maximum emitter-base voltage is 5 V. |
| 2 | Collector | passive | Collector of the PNP transistor; rated for -VCBO 40 V, -VCEO 30 V, 3 A continuous and 7 A peak collector current. |
| 3 | Emitter | passive | Emitter of the PNP transistor; the device dissipates 1 W total (10 W at Tc=25℃) with a 150℃ maximum junction temperature. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | -VCBO | 40 | V | Ta=25℃ | 1 | ||
| Collector to Emitter Voltage | -VCEO | 30 | V | Ta=25℃ | 1 | ||
| Emitter to Base Voltage | -VEBO | 5 | V | Ta=25℃ | 1 | ||
| Collector Current-Continuous | -IC | 3 | A | Ta=25℃ | 1 | ||
| Peak Collector Current | -ICP | 7 | A | Ta=25℃ | 1 | ||
| Base Current - Continuous | -IB | 0.6 | A | Ta=25℃ | 1 | ||
| Total Power Dissipation | PD | 1 | W | Ta=25℃ | 1 | ||
| Total Power Dissipation | PD | 10 | W | Tc=25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| DC Current Gain | hFE | 30 | -VCE = 2 V, -IC = 20 mA | 2 | |||
| DC Current Gain, Group P | hFE | 160 | 320 | -VCE = 2 V, -IC = 1 A, Current Gain Group P | 2 | ||
| Collector Base Cutoff Current | -ICBO | 1 | µA | -VCB = 30 V | 2 | ||
| Emitter Base Cutoff Current | -IEBO | 1 | µA | -VEB = 3 V | 2 | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 40 | V | -IC = 1 mA | 2 | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 30 | V | -IC = 1 mA | 2 | ||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 | V | -IE = 1 mA | 2 | ||
| Collector Emitter Saturation Voltage | -VCE(sat) | 0.5 | V | -IC = 2 A, -IB = 200 mA | 2 | ||
| Base Emitter Saturation Voltage | -VBE(sat) | 2 | V | -IC = 2 A, -IB = 200 mA | 2 | ||
| Current Gain Bandwidth Product | fT | 80 | MHz | -VCE = 5 V, -IC = 100 mA | 2 | ||
| Output Capacitance | Cob | 55 | pF | -VCB = 10 V, f = 1 MHz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | PIN1：Base PIN 2：Collector PIN 3：Emitter Absolute Maximum Ratings (Ta=25℃unless otherwise specified) | 1 |
CAD (KiCad official)
- Symbol:
2SB772SQ-P - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb772sq-p-etched.step/2sb772sq-p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb772sq-p.step/2sb772sq-p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (2 pp, sha256
bab53d738a0ca919, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).