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2SB772SQ-P

Public Made by Adom

by adom

PJSEMI Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SB772SQ-P

PJSEMI · Bipolar Transistors - BJT · SOT-89

2SB772SQ-P from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the PNP transistor; maximum continuous base current is 0.6 A and maximum emitter-base voltage is 5 V.
2 Collector passive Collector of the PNP transistor; rated for -VCBO 40 V, -VCEO 30 V, 3 A continuous and 7 A peak collector current.
3 Emitter passive Emitter of the PNP transistor; the device dissipates 1 W total (10 W at Tc=25℃) with a 150℃ maximum junction temperature.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector to Base Voltage -VCBO 40 V Ta=25℃ 1
Collector to Emitter Voltage -VCEO 30 V Ta=25℃ 1
Emitter to Base Voltage -VEBO 5 V Ta=25℃ 1
Collector Current-Continuous -IC 3 A Ta=25℃ 1
Peak Collector Current -ICP 7 A Ta=25℃ 1
Base Current - Continuous -IB 0.6 A Ta=25℃ 1
Total Power Dissipation PD 1 W Ta=25℃ 1
Total Power Dissipation PD 10 W Tc=25℃ 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
DC Current Gain hFE 30 -VCE = 2 V, -IC = 20 mA 2
DC Current Gain, Group P hFE 160 320 -VCE = 2 V, -IC = 1 A, Current Gain Group P 2
Collector Base Cutoff Current -ICBO 1 µA -VCB = 30 V 2
Emitter Base Cutoff Current -IEBO 1 µA -VEB = 3 V 2
Collector Base Breakdown Voltage -V(BR)CBO 40 V -IC = 1 mA 2
Collector Emitter Breakdown Voltage -V(BR)CEO 30 V -IC = 1 mA 2
Emitter Base Breakdown Voltage -V(BR)EBO 5 V -IE = 1 mA 2
Collector Emitter Saturation Voltage -VCE(sat) 0.5 V -IC = 2 A, -IB = 200 mA 2
Base Emitter Saturation Voltage -VBE(sat) 2 V -IC = 2 A, -IB = 200 mA 2
Current Gain Bandwidth Product fT 80 MHz -VCE = 5 V, -IC = 100 mA 2
Output Capacitance Cob 55 pF -VCB = 10 V, f = 1 MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs PIN1：Base PIN 2：Collector PIN 3：Emitter Absolute Maximum Ratings (Ta=25℃unless otherwise specified) 1

CAD (KiCad official)

  • Symbol: 2SB772SQ-P
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sb772sq-p-etched.step / 2sb772sq-p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sb772sq-p.step / 2sb772sq-p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (2 pp, sha256 bab53d738a0ca919, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF