component
BC856SH6327XTSA1
Public Made by Adomby adom
Infineon Technologies Bipolar (BJT), SOT-363-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownBC856SH6327XTSA1
Infineon Technologies · Bipolar (BJT) · SOT-363-6
BC856SH6327XTSA1 from Infineon Technologies, in a SOT-363-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of internal transistor TR1, with emitter-base voltage VEBO limited to 5 V. |
| 2 | B1 | passive | Base of internal transistor TR1, with peak collector current ICM limited to 200 mA (tp ≤ 10 ms). |
| 3 | C2 | passive | Collector of internal transistor TR2, with collector-emitter voltage VCEO rated at 65 V for BC856S. |
| 4 | E2 | passive | Emitter of internal transistor TR2, with emitter-base voltage VEBO limited to 5 V. |
| 5 | B2 | passive | Base of internal transistor TR2, with continuous collector current IC limited to 100 mA. |
| 6 | C1 | passive | Collector of internal transistor TR1, with collector-base voltage VCBO rated at 80 V for BC856S. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-363-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 65 | V | BC856S/U | 2 | ||
| Collector-base voltage | VCBO | 80 | V | BC856S, BC856U | 2 | ||
| Emitter-base voltage | VEBO | 5 | V | 2 | |||
| Collector current | IC | 100 | mA | 2 | |||
| Peak collector current | ICM | 200 | mA | tp ≤ 10 ms | 2 | ||
| Total power dissipation | Ptot | 250 | mW | TS ≤ 115 °C, BC856S | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| Junction - soldering point thermal resistance | RthJS | 140 | K/W | BC856S, BC857S | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 65 | V | IC = 10 mA, IB = 0, BC856S/U | 3 | ||
| Collector-base breakdown voltage | V(BR)CBO | 80 | V | IC = 10 µA, IE = 0, BC856S/U | 3 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 10 µA, IC = 0 | 3 | ||
| Collector-base cutoff current | ICBO | 0.015 | µA | VCB = 45 V, IE = 0 | 3 | ||
| Collector-base cutoff current at TA = 150 °C | ICBO | 5 | µA | VCB = 45 V, IE = 0, TA = 150 °C | 3 | ||
| Noise figure | F | 10 | dB | IC = 200 µA, VCE = 5 V, f = 1 kHz, Δf = 200 Hz, RS = 2 kΩ | 4 |
CAD (KiCad official)
- Symbol:
BC856SH6327XTSA1 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363-6 (KiCad packages3D, STEP)
- 3D model files:
bc856sh6327xtsa1-etched.step/bc856sh6327xtsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc856sh6327xtsa1.step/bc856sh6327xtsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
d46c104708df1a58, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).