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BC856SH6327XTSA1

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Infineon Technologies Bipolar (BJT), SOT-363-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC856SH6327XTSA1

Infineon Technologies · Bipolar (BJT) · SOT-363-6

BC856SH6327XTSA1 from Infineon Technologies, in a SOT-363-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of internal transistor TR1, with emitter-base voltage VEBO limited to 5 V.
2 B1 passive Base of internal transistor TR1, with peak collector current ICM limited to 200 mA (tp ≤ 10 ms).
3 C2 passive Collector of internal transistor TR2, with collector-emitter voltage VCEO rated at 65 V for BC856S.
4 E2 passive Emitter of internal transistor TR2, with emitter-base voltage VEBO limited to 5 V.
5 B2 passive Base of internal transistor TR2, with continuous collector current IC limited to 100 mA.
6 C1 passive Collector of internal transistor TR1, with collector-base voltage VCBO rated at 80 V for BC856S.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-363-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 65 V BC856S/U 2
Collector-base voltage VCBO 80 V BC856S, BC856U 2
Emitter-base voltage VEBO 5 V 2
Collector current IC 100 mA 2
Peak collector current ICM 200 mA tp ≤ 10 ms 2
Total power dissipation Ptot 250 mW TS ≤ 115 °C, BC856S 2
Junction temperature Tj 150 °C 2
Storage temperature Tstg -65 150 °C 2
Junction - soldering point thermal resistance RthJS 140 K/W BC856S, BC857S 2
Collector-emitter breakdown voltage V(BR)CEO 65 V IC = 10 mA, IB = 0, BC856S/U 3
Collector-base breakdown voltage V(BR)CBO 80 V IC = 10 µA, IE = 0, BC856S/U 3
Emitter-base breakdown voltage V(BR)EBO 5 V IE = 10 µA, IC = 0 3
Collector-base cutoff current ICBO 0.015 µA VCB = 45 V, IE = 0 3
Collector-base cutoff current at TA = 150 °C ICBO 5 µA VCB = 45 V, IE = 0, TA = 150 °C 3
Noise figure F 10 dB IC = 200 µA, VCE = 5 V, f = 1 kHz, Δf = 200 Hz, RS = 2 kΩ 4

CAD (KiCad official)

  • Symbol: BC856SH6327XTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363-6 (KiCad packages3D, STEP)
  • 3D model files: bc856sh6327xtsa1-etched.step / bc856sh6327xtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc856sh6327xtsa1.step / bc856sh6327xtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 d46c104708df1a58, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF