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CEM7350-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCEM7350-JSM
JSMSEMI · MOSFETs · SOP-8
CEM7350-JSM from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS=100V, ID=2.2A, RDS(ON)<120mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, with absolute maximum VGS of ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (VDS=-100V, ID=-1.8A, RDS(ON)<200mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with absolute maximum VGS of ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, rated -100V VDS and tied to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, rated -100V VDS and tied to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, rated 100V VDS and tied to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, rated 100V VDS and tied to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 5 | |
| GATE-Source Threshold Voltage (N-Channel) | VGS(th) | 1.2 | 2.5 | V | VGS=VDS, ID=250μA | 2 | |
| GATE-Source Threshold Voltage (P-Channel) | VGS(th) | -1.2 | -1.6 | -2.5 | V | VGS=VDS, ID=250μA | 5 |
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 100 | V | VGS=0V,ID=250μA | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -100 | V | VGS=0V,ID=250μA | 5 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 10 | μA | VGS=0V, VDS=80V,TJ=25℃ | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 100 | μA | VGS=0V, VDS=80V,TJ=55℃ | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | μA | VGS=0V, VDS=-100V,TJ=25℃ | 5 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -10 | μA | VGS=0V, VDS=-80V,TJ=125℃ | 5 | ||
| Drain-Source On Resistance (N-Channel) | RDS(ON) | 86 | 120 | mΩ | VGS=10V,ID=2A | 2 | |
| Drain-Source On Resistance (P-Channel) | RDS(ON) | 190 | 225 | mΩ | VGS=-10V,ID=-1.8A | 5 | |
| Drain-Source On Resistance (P-Channel) | RDS(ON) | 180 | 200 | mΩ | VGS=-4.5V,ID=-1.5A | 5 | |
| Source-Drain Diode Forward Voltage (N-Channel) | VSD | 1.2 | V | VGS=0V,IS=1A,,TJ=25℃ | 3 | ||
| Continuous Source Current (N-Channel) | IS | 2.2 | A | VG=VD=0V , Force Current | 3 | ||
| Pulsed Source Current (N-Channel) | ISM | 13.2 | A | 3 | |||
| Diode Forward Voltage (P-Channel) | VSD | -1 | V | VGS=0V,IS=-1A,TJ=25℃ | 6 | ||
| Continuous Source Current (P-Channel) | IS | -1.8 | A | VG=VD=0V , Force Current | 6 | ||
| Input Capacitance (P-Channel) | Ciss | 1455 | 2200 | pF | VDS=-50V, VGS=0V, f=1MHz | 5 | |
| Output Capacitance (P-Channel) | Coss | 880 | 1300 | pF | 5 | ||
| Reverse Transfer Capacitance (P-Channel) | Crss | 58 | 85 | pF | 5 | ||
| Total Gate Charge (P-Channel) | Qg | 20 | 40 | nC | VGS=-10V,VDS=-80V,ID=-1.8A | 6 | |
| Gate-Source Charge (P-Channel) | Qgs | 3.5 | 7 | nC | 6 | ||
| Gate-Drain Charge (P-Channel) | Qgd | 4.6 | 9 | nC | 6 | ||
| Turn-On Delay Time (P-Channel) | td(on) | 18 | 36 | ns | VGS=-10V,VDD=-50V RG=25Ω,ID=-1.8A | 6 | |
| Rise Time (P-Channel) | tr | 8 | 16 | ns | 6 | ||
| Turn-Off Delay Time (P-Channel) | td(off) | 100 | 200 | ns | 6 | ||
| Fall Time (P-Channel) | tf | 30 | 60 | ns | 6 | ||
| Drain-Source Breakdown Voltage (N-Channel) | VDS | 100 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -100 | V | 1 | |||
| Continuous Drain Current (N-Channel) | ID | 2.2 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -1.8 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 1.7 | A | TA=70℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -1.4 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 13.2 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -7.2 | A | 1 | |||
| Power Dissipation (N-Channel) | PD | 1.5 | W | 1 | |||
| Power Dissipation (P-Channel) | PD | 2 | W | 1 | |||
| Thermal Resistance, Junction to Ambient (N-Channel) | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient (P-Channel) | RθJA | 62.5 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case (N-Channel) | RθJC | 25 | ℃/W | 1 | |||
| Forward Transconductance (N-Channel) | GFS | 10.2 | S | VDS=5V, ID=2A | 2 | ||
| Forward Transconductance (P-Channel) | GFS | 6.5 | S | VDS=--10V, ID=-3A | 5 | ||
| Gate Resistance (N-Channel) | RG | 2.1 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Gate resistance (P-Channel) | Rg | 16 | Ω | VGS=0V, VDS=0V, F=1MHz | 5 | ||
| Input Capacitance (N-Channel) | Ciss | 1050 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance (N-Channel) | Coss | 45 | pF | 2 | |||
| Reverse Transfer Capacitance (N-Channel) | Crss | 30 | pF | 2 | |||
| Gate Charge (N-Channel) | Qg | 18.4 | nc | VGS=10V VDS=80V ID=2A | 2 | ||
| Gate-Drain Charge (N-Channel) | Qgd | 3.1 | nc | 2 | |||
| Turn-On Delay Time (N-Channel) | td(on) | 5.6 | ns | VDD=50V , VGS=10V , RG=3.3, ID=2A | 2 | ||
| Rise Time (N-Channel) | tr | 20 | ns | 2 | |||
| Turn-Off Delay Time (N-Channel) | td(off) | 28 | ns | 2 | |||
| Fall Time (N-Channel) | tf | 24 | ns | 2 | |||
| Reverse Recovery Time (P-Channel) | Trr | 13 | ns | VR=-100V, IS=-1A di/dt=100A/μs, TJ=25℃ | 6 | ||
| Reverse Recovery Charge (P-Channel) | Qrr | 15 | nC | 6 |
CAD (KiCad official)
- Symbol:
CEM7350-JSM - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cem7350-jsm-etched.step/cem7350-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cem7350-jsm.step/cem7350-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (8 pp, sha256
06ed6be31ba7c08a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).