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Contents

README

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DS10BR150TSD

Texas Instruments · LVDS ICs · WSON-8-EP(3x3)

DS10BR150TSD from Texas Instruments, in a WSON-8-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected No connect pin.
2 IN+ input Non-inverting LVDS input with internal 100Ω termination to IN-; accepts LVDS, CML and LVPECL levels, input range -0.3V to +4V absolute maximum.
3 IN- input Inverting LVDS input with internal 100Ω termination to IN+; accepts LVDS, CML and LVPECL levels, input range -0.3V to +4V absolute maximum.
4 NC unconnected No connect pin.
5 NC unconnected No connect pin.
6 OUT- output Inverting LVDS output with internal 100Ω termination to OUT+, typical VOD 350 mV (250 to 450 mV).
7 OUT+ output Non-inverting LVDS output with internal 100Ω termination to OUT-, typical VOD 350 mV (250 to 450 mV).
8 VCC power_in Power supply pin, 3.0V to 3.6V recommended operating range (3.3V typical).
9 GND power_in Ground pad (DAP, die attach pad), which must be soldered to the board for thermal and mechanical performance.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-8-EP(3x3)
Category Interface
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage (VCC) VCC -0.3 4 V 3
LVDS Input Voltage (IN+, IN−) -0.3 4 V 3
Differential Input Voltage /VID/ /VID/ 1 V 3
LVDS Output Voltage (OUT+, OUT−) -0.3 V 3
LVDS Differential Output Voltage ((OUT+) − (OUT−)) 0 1 V 3
LVDS Output Short Circuit Current Duration 5 ms 3
Junction Temperature 150 °C 3
Storage Temperature Range -65 150 °C 3
Lead Temperature Range Soldering 260 °C Soldering (4 sec.) 3
Maximum Package Power Dissipation at 25°C 2.08 W NGQ Package, at 25°C 3
ESD Susceptibility HBM 7 kV Human Body Model, JESD22-A114C 3
ESD Susceptibility MM 250 V Machine Model, JESD22-A115-A 3
ESD Susceptibility CDM 1250 V Field Induced Charge Device Model, JESD22-C101-C 3
Supply Voltage (VCC) VCC 3 3.3 3.6 V 3
Receiver Differential Input Voltage (VID) VID 0 1 V 3
Operating Free Air Temperature (TA) TA -40 25 85 °C 3
Package Thermal Resistance θJA θJA 60 °C/W 3
Package Thermal Resistance θJC θJC 12.3 °C/W 3
Differential Output Voltage VOD 250 350 450 mV 4
Change in Magnitude of VOD for Complimentary Output States ΔVOD -35 35 mV RL = 100Ω 4
Offset Voltage VOS 1.05 1.2 1.375 V 4
Change in Magnitude of VOS for Complimentary Output States ΔVOS -35 35 mV RL = 100Ω 4
Output Short Circuit Current IOS -50 -30 mA OUT to GND 4
Output Short Circuit Current IOS 7.5 50 mA OUT to VCC 4
Input Differential Voltage VID 0 1 V 4
Differential Input High Threshold VTH 0 100 mV VCM = +0.05V or VCC-0.05V 4
Differential Input Low Threshold VTL -100 0 mV 4
Common Mode Voltage Range VCMR 0.05 V VID = 100 mV 4
Input Current IIN -10 10 μA VIN = 3.6V or 0V; VCC = 3.6V or 0V 4
Total Supply Current ICCD 16 21 mA 4
Differential Propagation Delay High to Low tPHLD2 380 600 ps RL = 100Ω 5
Differential Propagation Delay Low to High tPLHD2 410 600 ps RL = 100Ω 5
Pulse Skew /tPLHD − tPHLD/ tSKD1 30 150 ps 5
Part to Part Skew tSKD2 45 160 ps 5
Rise Time tLHT 165 400 ps RL = 100Ω 5
Fall Time tHLT 155 400 ps RL = 100Ω 5
Deterministic Jitter (Peak-to-Peak Value) tDJ 12 39 ps VID = 350 mV, VCM = 1.2V, 622 Mbps 5
Deterministic Jitter (Peak-to-Peak Value) tDJ 15 42 ps VID = 350 mV, VCM = 1.2V, K28.5 1.06 Gbps (NRZ) 5
Random Jitter (RMS Value) tRJ 0.6 1.3 ps VID = 350 mV, VCM = 1.2V, 311 MHz 5
Random Jitter (RMS Value) tRJ 0.6 1.1 ps VID = 350 mV, VCM = 1.2V, Clock 503 MHz (NRZ) 5
Total Jitter (Peak to Peak Value) tTJ 0.02 0.04 UIP-P VID = 350 mV, VCM = 1.2V, 622 Mbps 5
Total Jitter (Peak to Peak Value) tTJ 0.02 0.05 UIP-P VID = 350 mV, VCM = 1.2V, PRBS-23 (NRZ) 1.06 Gbps 5

CAD (KiCad official)

  • Symbol: DS10BR150TSD
  • Footprint: Package_SON:WSON-8-1EP_3x3mm_P0.5mm_EP1.6x2.0mm
  • 3D model: WSON-8-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: ds10br150tsd-etched.step / ds10br150tsd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ds10br150tsd.step / ds10br150tsd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (17 pp, sha256 9757757eba5cdd66, retrieved 2026-11-11, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF