component
SK50N06A
Public Made by Adomby adom
Shikues MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSK50N06A
Shikues · MOSFETs · TO-252
SK50N06A from Shikues, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±20V (VGSS) with a gate threshold of 1.0V to 3.0V at VDS=VGS, ID=250uA. |
| 2 | D | passive | Drain; drain-to-source voltage is rated at 60V (VDSS) with continuous drain current of 55A at TC=25℃ and pulsed drain current of 200A. |
| 3 | S | passive | Source; continuous source (body diode) current is 55A and pulsed source current is 200A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V | TJ=+25℃ to +175℃ (note 1) | 1 | ||
| Gate-to-Source Voltage | VGSS | -20 | 20 | V | TC=25℃ unless otherwise specified | 1 | |
| Continuous Drain Current | ID | 55 | A | TC=25℃ unless otherwise specified | 1 | ||
| Continuous Drain Current at TC=100℃ | ID | 35 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | VGS=10V (note 2) | 1 | ||
| Single Pulse Avalanche Energy | EAS | 300 | mJ | TC=25℃ unless otherwise specified | 1 | ||
| Power Dissipation | PD | 85 | W | TC=25℃ unless otherwise specified | 1 | ||
| Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case | TL | 300 | ℃ | 10 seconds | 1 | ||
| Maximum Temperature for Soldering, Package Body | TPAK | 260 | ℃ | 10 seconds | 1 | ||
| Operating and Storage Temperature Range | TJ & TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current at TJ=125℃ | IDSS | 100 | uA | VDS=48V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-to-Source Leakage Current (positive) | IGSS | 1 | uA | VGS=+20V, VDS=0V | 2 | ||
| Gate-to-Source Leakage Current (negative) | IGSS | -1 | uA | VGS=-20V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 13.5 | 17 | mΩ | VGS=10V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Forward Transconductance | gFS | 18 | S | VDS=5V, ID=20A | 2 | ||
| Continuous Source Current | ISD | 55 | A | Integral PN-diode in MOSFET (note 2) | 3 | ||
| Pulsed Source Current | ISM | 200 | A | Integral PN-diode in MOSFET (note 2) | 3 | ||
| Diode Forward Voltage | VSD | 1.5 | V | IS=55A, VGS=0V (note 3) | 3 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.76 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 75 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
SK50N06A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sk50n06a-etched.step/sk50n06a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sk50n06a.step/sk50n06a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (8 pp, sha256
f69888818f3ddf48, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).