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SK50N06A

Public Made by Adom

by adom

Shikues MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SK50N06A

Shikues · MOSFETs · TO-252

SK50N06A from Shikues, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated at ±20V (VGSS) with a gate threshold of 1.0V to 3.0V at VDS=VGS, ID=250uA.
2 D passive Drain; drain-to-source voltage is rated at 60V (VDSS) with continuous drain current of 55A at TC=25℃ and pulsed drain current of 200A.
3 S passive Source; continuous source (body diode) current is 55A and pulsed source current is 200A.

Key specifications

Parameter Value
Manufacturer Shikues
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 60 V TJ=+25℃ to +175℃ (note 1) 1
Gate-to-Source Voltage VGSS -20 20 V TC=25℃ unless otherwise specified 1
Continuous Drain Current ID 55 A TC=25℃ unless otherwise specified 1
Continuous Drain Current at TC=100℃ ID 35 A TC=100℃ 1
Pulsed Drain Current IDM 200 A VGS=10V (note 2) 1
Single Pulse Avalanche Energy EAS 300 mJ TC=25℃ unless otherwise specified 1
Power Dissipation PD 85 W TC=25℃ unless otherwise specified 1
Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case TL 300 ℃ 10 seconds 1
Maximum Temperature for Soldering, Package Body TPAK 260 ℃ 10 seconds 1
Operating and Storage Temperature Range TJ & TSTG -55 175 ℃ 1
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Drain-to-Source Leakage Current IDSS 1 uA VDS=60V, VGS=0V 2
Drain-to-Source Leakage Current at TJ=125℃ IDSS 100 uA VDS=48V, VGS=0V, TJ=125℃ 2
Gate-to-Source Leakage Current (positive) IGSS 1 uA VGS=+20V, VDS=0V 2
Gate-to-Source Leakage Current (negative) IGSS -1 uA VGS=-20V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(ON) 13.5 17 mΩ VGS=10V, ID=20A 2
Gate Threshold Voltage VGS(TH) 1 3 V VDS=VGS, ID=250uA 2
Forward Transconductance gFS 18 S VDS=5V, ID=20A 2
Continuous Source Current ISD 55 A Integral PN-diode in MOSFET (note 2) 3
Pulsed Source Current ISM 200 A Integral PN-diode in MOSFET (note 2) 3
Diode Forward Voltage VSD 1.5 V IS=55A, VGS=0V (note 3) 3
Thermal Resistance, Junction-to-Case RθJC 1.76 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 75 ℃/W 1

CAD (KiCad official)

  • Symbol: SK50N06A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sk50n06a-etched.step / sk50n06a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sk50n06a.step / sk50n06a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (8 pp, sha256 f69888818f3ddf48, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF