# SK50N06A

**Shikues** · MOSFETs · TO-252

SK50N06A from Shikues, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±20V (VGSS) with a gate threshold of 1.0V to 3.0V at VDS=VGS, ID=250uA. |
| 2 | D | passive | Drain; drain-to-source voltage is rated at 60V (VDSS) with continuous drain current of 55A at TC=25℃ and pulsed drain current of 200A. |
| 3 | S | passive | Source; continuous source (body diode) current is 55A and pulsed source current is 200A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 60 | V | TJ=+25℃ to +175℃ (note 1) | 1 |
| Gate-to-Source Voltage | VGSS | -20 |  | 20 | V | TC=25℃ unless otherwise specified | 1 |
| Continuous Drain Current | ID |  |  | 55 | A | TC=25℃ unless otherwise specified | 1 |
| Continuous Drain Current at TC=100℃ | ID |  |  | 35 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 200 | A | VGS=10V (note 2) | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 300 | mJ | TC=25℃ unless otherwise specified | 1 |
| Power Dissipation | PD |  |  | 85 | W | TC=25℃ unless otherwise specified | 1 |
| Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case | TL |  |  | 300 | ℃ | 10 seconds | 1 |
| Maximum Temperature for Soldering, Package Body | TPAK |  |  | 260 | ℃ | 10 seconds | 1 |
| Operating and Storage Temperature Range | TJ & TSTG | -55 |  | 175 | ℃ |  | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=60V, VGS=0V | 2 |
| Drain-to-Source Leakage Current at TJ=125℃ | IDSS |  |  | 100 | uA | VDS=48V, VGS=0V, TJ=125℃ | 2 |
| Gate-to-Source Leakage Current (positive) | IGSS |  |  | 1 | uA | VGS=+20V, VDS=0V | 2 |
| Gate-to-Source Leakage Current (negative) | IGSS |  |  | -1 | uA | VGS=-20V, VDS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  | 13.5 | 17 | mΩ | VGS=10V, ID=20A | 2 |
| Gate Threshold Voltage | VGS(TH) | 1 |  | 3 | V | VDS=VGS, ID=250uA | 2 |
| Forward Transconductance | gFS | 18 |  |  | S | VDS=5V, ID=20A | 2 |
| Continuous Source Current | ISD |  |  | 55 | A | Integral PN-diode in MOSFET (note 2) | 3 |
| Pulsed Source Current | ISM |  |  | 200 | A | Integral PN-diode in MOSFET (note 2) | 3 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | IS=55A, VGS=0V (note 3) | 3 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 1.76 |  | ℃/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 75 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `SK50N06A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sk50n06a-etched.step` / `sk50n06a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sk50n06a.step` / `sk50n06a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588950320492134400) (8 pp, sha256 `f69888818f3ddf48`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sk50n06a-datasheet.pdf)