component
OSD9N50C
Public Made by Adomby adom
OSEN MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownOSD9N50C
OSEN · MOSFETs · TO-252
OSD9N50C from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is rated ±30 V continuous, with threshold of 2.0 to 4.0 V at ID=250µA. |
| 2 | Drain | passive | Drain terminal; drain-source voltage is rated 500 V with 9 A continuous drain current and 55 A pulsed. |
| 3 | Source | passive | Source terminal; continuous drain-source diode forward current is 9 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | OSEN |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=500V, VGS=0 | 2 | ||
| Turn-On Delay Time | Td(on) | 13.6 | 37.2 | ns | VDS=250V, ID=9A, RG=25Ω (Note 2) | 3 | |
| Rise Time | Tr | 9.1 | 28.2 | ns | VDS=250V, ID=9A, RG=25Ω (Note 2) | 3 | |
| Turn-Off Delay Time | Td(off) | 42 | 94 | ns | VDS=250V, ID=9A, RG=25Ω (Note 2) | 3 | |
| Fall Time | Tf | 10 | 30 | ns | VDS=250V, ID=9A, RG=25Ω (Note 2) | 3 | |
| Total Gate Charge | Qg | 43 | 56 | nC | VDS=400V, VGS=10V, ID=9A (Note 2) | 3 | |
| Input Capacitance | Ciss | 1130 | 1505 | pF | VDS=25V, VGS=0, f=1MHz | 3 | |
| Output Capacitance | Coss | 45 | 60 | pF | VDS=25V, VGS=0, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 20 | 35 | pF | VDS=25V, VGS=0, f=1MHz | 3 | |
| Continuous Drain-Source Diode Forward Current | IS | 9 | A | (Note 2) | 3 | ||
| Diode Forward On-Voltage | VSD | 1.4 | V | IS=9A, VGS=0 | 3 | ||
| Drain-Source Voltage | VDSS | 500 | V | Tc=25°C (table heading) | 2 | ||
| Gate-Source Voltage-Continuous | VGS | -30 | 30 | V | Tc=25°C (table heading) | 2 | |
| Drain Current-Continuous | ID | 9 | A | Note 2; Tc=25°C (table heading) | 2 | ||
| Drain Current-Single Pulsed | IDM | 55 | A | Note 1 | 2 | ||
| Power Dissipation | PD | 60 | W | Note 2; Tc=25°C (table heading) | 2 | ||
| Max. Operating Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.08 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
OSD9N50C - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
osd9n50c-etched.step/osd9n50c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);osd9n50c.step/osd9n50c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: OSEN datasheet (3 pp, sha256
c92b00a5c96e7669, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).