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OSD9N50C

Public Made by Adom

by adom

OSEN MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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OSD9N50C

OSEN · MOSFETs · TO-252

OSD9N50C from OSEN, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage is rated ±30 V continuous, with threshold of 2.0 to 4.0 V at ID=250µA.
2 Drain passive Drain terminal; drain-source voltage is rated 500 V with 9 A continuous drain current and 55 A pulsed.
3 Source passive Source terminal; continuous drain-source diode forward current is 9 A max.

Key specifications

Parameter Value
Manufacturer OSEN
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 500 V ID=250µA, VGS=0V, TJ=25°C 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±30V, VDS=0 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=500V, VGS=0 2
Turn-On Delay Time Td(on) 13.6 37.2 ns VDS=250V, ID=9A, RG=25Ω (Note 2) 3
Rise Time Tr 9.1 28.2 ns VDS=250V, ID=9A, RG=25Ω (Note 2) 3
Turn-Off Delay Time Td(off) 42 94 ns VDS=250V, ID=9A, RG=25Ω (Note 2) 3
Fall Time Tf 10 30 ns VDS=250V, ID=9A, RG=25Ω (Note 2) 3
Total Gate Charge Qg 43 56 nC VDS=400V, VGS=10V, ID=9A (Note 2) 3
Input Capacitance Ciss 1130 1505 pF VDS=25V, VGS=0, f=1MHz 3
Output Capacitance Coss 45 60 pF VDS=25V, VGS=0, f=1MHz 3
Reverse Transfer Capacitance Crss 20 35 pF VDS=25V, VGS=0, f=1MHz 3
Continuous Drain-Source Diode Forward Current IS 9 A (Note 2) 3
Diode Forward On-Voltage VSD 1.4 V IS=9A, VGS=0 3
Drain-Source Voltage VDSS 500 V Tc=25°C (table heading) 2
Gate-Source Voltage-Continuous VGS -30 30 V Tc=25°C (table heading) 2
Drain Current-Continuous ID 9 A Note 2; Tc=25°C (table heading) 2
Drain Current-Single Pulsed IDM 55 A Note 1 2
Power Dissipation PD 60 W Note 2; Tc=25°C (table heading) 2
Max. Operating Junction Temperature Tj 150 ℃ 2
Thermal Resistance, Junction to Case Rth(j-c) 2.08 ℃/W 3

CAD (KiCad official)

  • Symbol: OSD9N50C
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: osd9n50c-etched.step / osd9n50c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); osd9n50c.step / osd9n50c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: OSEN datasheet (3 pp, sha256 c92b00a5c96e7669, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF