component
RSS065N06HZGTB
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRSS065N06HZGTB
ROHM Semicon · MOSFETs · SOP-8
RSS065N06HZGTB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | MOSFET source terminal, tied to the source of the inner circuit together with pins 2 and 3; ID is ±6.5A continuous. |
| 2 | Source | passive | MOSFET source terminal, tied to the source of the inner circuit together with pins 1 and 3; ID is ±6.5A continuous. |
| 3 | Source | passive | MOSFET source terminal, tied to the source of the inner circuit together with pins 1 and 2; ID is ±6.5A continuous. |
| 4 | Gate | input | MOSFET gate input with an ESD protection diode to source; VGSS is rated ±20V. |
| 5 | Drain | passive | MOSFET drain terminal, common with pins 6, 7 and 8; VDSS is 60V. |
| 6 | Drain | passive | MOSFET drain terminal, common with pins 5, 7 and 8; VDSS is 60V. |
| 7 | Drain | passive | MOSFET drain terminal, common with pins 5, 6 and 8; VDSS is 60V. |
| 8 | Drain | passive | MOSFET drain terminal, common with pins 5, 6 and 7; VDSS is 60V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 60 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -6.5 | 6.5 | A | Ta = 25°C | 1 | |
| Pulsed drain current | IDP | -26 | 26 | A | Pw ≤10μs, Duty cycle ≤1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Power dissipation (ceramic board) | PD | 2 | W | Mounted on a ceramic board (30×30×0.8mm) | 1 | ||
| Power dissipation (Cu board) | PD | 1.4 | W | Mounted on a Cu board (40×40×0.8mm) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction-ambient (ceramic board) | RthJA | 62.5 | ℃/W | Mounted on a ceramic board (30×30×0.8mm) | 2 | ||
| Thermal resistance junction-ambient (Cu board) | RthJA | 89.2 | ℃/W | Mounted on a Cu board (40×40×0.8mm) | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 1mA | 2 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 63.7 | mV/℃ | ID = 1mA referenced to 25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -2.8 | mV/℃ | ID = 1mA referenced to 25℃ | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 24 | 37 | mΩ | VGS = 10V, ID = 6.5A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 28 | 44 | mΩ | VGS = 4.5V, ID = 6.5A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 31 | 48 | mΩ | VGS = 4.0V, ID = 6.5A, pulsed | 2 | |
| Forward transfer admittance | /Yfs/ | 4 | S | VDS = 10V, ID = 6.5A, pulsed | 2 | ||
| Total gate charge | Qg | 11 | 16 | nC | VDD ⋍ 30V, ID = 6.5A, VGS = 5V | 3 | |
| Body diode continuous forward current | IS | 1.6 | A | Ta = 25℃ | 3 | ||
| Body diode pulse forward current | ISP | 26 | A | Pw ≤10μs, Duty cycle ≤1% | 3 | ||
| Body diode forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 1.6A | 3 | ||
| Gate resistance | RG | 4 | Ω | f = 1MHz, open drain | 2 | ||
| Input capacitance | Ciss | 900 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 200 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 100 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 13 | ns | VDD ⋍ 30V, VGS = 10V, ID = 3.3A, RL ⋍ 9.1Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 25 | ns | VDD ⋍ 30V, VGS = 10V, ID = 3.3A, RL ⋍ 9.1Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 60 | ns | VDD ⋍ 30V, VGS = 10V, ID = 3.3A, RL ⋍ 9.1Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 20 | ns | VDD ⋍ 30V, VGS = 10V, ID = 3.3A, RL ⋍ 9.1Ω, RG = 10Ω | 3 | ||
| Gate-Source charge | Qgs | 2 | nC | VDD ⋍ 30V, ID = 6.5A, VGS = 5V | 3 | ||
| Gate-Drain charge | Qgd | 4 | nC | VDD ⋍ 30V, ID = 6.5A, VGS = 5V | 3 |
CAD (KiCad official)
- Symbol:
RSS065N06HZGTB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rss065n06hzgtb-etched.step/rss065n06hzgtb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rss065n06hzgtb.step/rss065n06hzgtb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
753a56d1c524bcf6, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).