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RSS065N06HZGTB

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ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RSS065N06HZGTB

ROHM Semicon · MOSFETs · SOP-8

RSS065N06HZGTB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive MOSFET source terminal, tied to the source of the inner circuit together with pins 2 and 3; ID is ±6.5A continuous.
2 Source passive MOSFET source terminal, tied to the source of the inner circuit together with pins 1 and 3; ID is ±6.5A continuous.
3 Source passive MOSFET source terminal, tied to the source of the inner circuit together with pins 1 and 2; ID is ±6.5A continuous.
4 Gate input MOSFET gate input with an ESD protection diode to source; VGSS is rated ±20V.
5 Drain passive MOSFET drain terminal, common with pins 6, 7 and 8; VDSS is 60V.
6 Drain passive MOSFET drain terminal, common with pins 5, 7 and 8; VDSS is 60V.
7 Drain passive MOSFET drain terminal, common with pins 5, 6 and 8; VDSS is 60V.
8 Drain passive MOSFET drain terminal, common with pins 5, 6 and 7; VDSS is 60V.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS 60 V Ta = 25°C 1
Continuous drain current ID -6.5 6.5 A Ta = 25°C 1
Pulsed drain current IDP -26 26 A Pw ≤10μs, Duty cycle ≤1% 1
Gate-Source voltage VGSS -20 20 V Ta = 25°C 1
Power dissipation (ceramic board) PD 2 W Mounted on a ceramic board (30×30×0.8mm) 1
Power dissipation (Cu board) PD 1.4 W Mounted on a Cu board (40×40×0.8mm) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance junction-ambient (ceramic board) RthJA 62.5 ℃/W Mounted on a ceramic board (30×30×0.8mm) 2
Thermal resistance junction-ambient (Cu board) RthJA 89.2 ℃/W Mounted on a Cu board (40×40×0.8mm) 2
Drain-Source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID = 1mA 2
Breakdown voltage temperature coefficient ΔV(BR)DSS/ΔTj 63.7 mV/℃ ID = 1mA referenced to 25℃ 2
Zero gate voltage drain current IDSS 1 μA VDS = 60V, VGS = 0V 2
Gate-Source leakage current IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 2.5 V VDS = 10V, ID = 1mA 2
Gate threshold voltage temperature coefficient ΔVGS(th)/ΔTj -2.8 mV/℃ ID = 1mA referenced to 25℃ 2
Static drain-source on-state resistance RDS(on) 24 37 mΩ VGS = 10V, ID = 6.5A, pulsed 2
Static drain-source on-state resistance RDS(on) 28 44 mΩ VGS = 4.5V, ID = 6.5A, pulsed 2
Static drain-source on-state resistance RDS(on) 31 48 mΩ VGS = 4.0V, ID = 6.5A, pulsed 2
Forward transfer admittance /Yfs/ 4 S VDS = 10V, ID = 6.5A, pulsed 2
Total gate charge Qg 11 16 nC VDD ⋍ 30V, ID = 6.5A, VGS = 5V 3
Body diode continuous forward current IS 1.6 A Ta = 25℃ 3
Body diode pulse forward current ISP 26 A Pw ≤10μs, Duty cycle ≤1% 3
Body diode forward voltage VSD 1.2 V VGS = 0V, IS = 1.6A 3
Gate resistance RG 4 Ω f = 1MHz, open drain 2
Input capacitance Ciss 900 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Output capacitance Coss 200 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Reverse transfer capacitance Crss 100 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Turn-on delay time td(on) 13 ns VDD ⋍ 30V, VGS = 10V, ID = 3.3A, RL ⋍ 9.1Ω, RG = 10Ω 3
Rise time tr 25 ns VDD ⋍ 30V, VGS = 10V, ID = 3.3A, RL ⋍ 9.1Ω, RG = 10Ω 3
Turn-off delay time td(off) 60 ns VDD ⋍ 30V, VGS = 10V, ID = 3.3A, RL ⋍ 9.1Ω, RG = 10Ω 3
Fall time tf 20 ns VDD ⋍ 30V, VGS = 10V, ID = 3.3A, RL ⋍ 9.1Ω, RG = 10Ω 3
Gate-Source charge Qgs 2 nC VDD ⋍ 30V, ID = 6.5A, VGS = 5V 3
Gate-Drain charge Qgd 4 nC VDD ⋍ 30V, ID = 6.5A, VGS = 5V 3

CAD (KiCad official)

  • Symbol: RSS065N06HZGTB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: rss065n06hzgtb-etched.step / rss065n06hzgtb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rss065n06hzgtb.step / rss065n06hzgtb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (14 pp, sha256 753a56d1c524bcf6, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF