component
PJM10P30PA
Public Made by Adomby adom
PJSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPJM10P30PA
PJSEMI · MOSFETs · SOP-8
PJM10P30PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are internally common Source connections, with the absolute maximum source-drain ratings of VDS 30 V and continuous ID 10 A. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, common with pins 1 and 3, with the absolute maximum ratings of VDS 30 V and continuous ID 10 A. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET, common with pins 1 and 2, with the absolute maximum ratings of VDS 30 V and continuous ID 10 A. |
| 4 | Gate | input | Gate control terminal of the MOSFET; the gate-source voltage is rated at ±20 V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET; pins 5 through 8 are common Drain connections, rated for VDS 30 V and continuous ID 10 A. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET, common with pins 5, 7 and 8, rated for VDS 30 V and continuous ID 10 A. |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET, common with pins 5, 6 and 8, rated for VDS 30 V and continuous ID 10 A. |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET, common with pins 5, 6 and 7, rated for VDS 30 V and continuous ID 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | -V(BR)DSS | 30 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | -IDSS | 1 | μA | VDS=-30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | -IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | -VGS(th) | 1 | 1.5 | 2.4 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-Resistance (VGS=-10V) | RDS(on) | 16 | 23 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Drain-Source On-Resistance (VGS=-4.5V) | RDS(on) | 25 | 34 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Diode Forward Voltage | -VSD | 1.2 | V | VGS=0V, IS=-10A | 2 | ||
| Diode Forward Current | -IS | 10 | A | 2 | |||
| Drain-Source Voltage | -VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | -ID | 10 | A | 1 | |||
| Drain Current-Pulsed | -IDM | 40 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 3.7 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 33.8 | °C/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
PJM10P30PA - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
pjm10p30pa-etched.step/pjm10p30pa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pjm10p30pa.step/pjm10p30pa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PJSEMI datasheet (5 pp, sha256
6defdc33082a77bc, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).